New growth technique for luminescent layers on silicon

M. S. Brandt; A. Breitschwerdt; H. D. Fuchs; A. Höpner; M. Rosenbauer; M. Stutzmann; J. Weber

doi:10.1007/BF00324341

New growth technique for luminescent layers on silicon

M. S. Brandt
, A. Breitschwerdt
, H. D. Fuchs
, A. Höpner
, M. Rosenbauer
, M. Stutzmann
, J. Weber

Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We report the growth of siloxene on crystalline silicon (111) surfaces based on the chemical transformation of a calcium disilicide layer. The siloxene films obtained show a prominent luminescence in the green, with intensities comparable to the luminescence observed from porous silicon. The structural properties of the siloxene films are studied with infrared transmission and TEM micrographs.

Original language	English
Pages (from-to)	567-569
Number of pages	3
Journal	Applied Physics A Solids and Surfaces
Volume	54
Issue number	6
DOIs	https://doi.org/10.1007/BF00324341
State	Published - Jun 1992
Externally published	Yes

Keywords

68.55-a
68.65+g
78.55-m

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10.1007/BF00324341

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title = "New growth technique for luminescent layers on silicon",

abstract = "We report the growth of siloxene on crystalline silicon (111) surfaces based on the chemical transformation of a calcium disilicide layer. The siloxene films obtained show a prominent luminescence in the green, with intensities comparable to the luminescence observed from porous silicon. The structural properties of the siloxene films are studied with infrared transmission and TEM micrographs.",

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T1 - New growth technique for luminescent layers on silicon

AU - Brandt, M. S.

AU - Breitschwerdt, A.

AU - Fuchs, H. D.

AU - Höpner, A.

AU - Rosenbauer, M.

AU - Stutzmann, M.

AU - Weber, J.

PY - 1992/6

Y1 - 1992/6

N2 - We report the growth of siloxene on crystalline silicon (111) surfaces based on the chemical transformation of a calcium disilicide layer. The siloxene films obtained show a prominent luminescence in the green, with intensities comparable to the luminescence observed from porous silicon. The structural properties of the siloxene films are studied with infrared transmission and TEM micrographs.

AB - We report the growth of siloxene on crystalline silicon (111) surfaces based on the chemical transformation of a calcium disilicide layer. The siloxene films obtained show a prominent luminescence in the green, with intensities comparable to the luminescence observed from porous silicon. The structural properties of the siloxene films are studied with infrared transmission and TEM micrographs.

KW - 68.55-a

KW - 68.65+g

KW - 78.55-m

UR - https://www.scopus.com/pages/publications/0009343957

U2 - 10.1007/BF00324341

DO - 10.1007/BF00324341

M3 - Article

AN - SCOPUS:0009343957

SN - 0721-7250

VL - 54

SP - 567

EP - 569

JO - Applied Physics A Solids and Surfaces

JF - Applied Physics A Solids and Surfaces

IS - 6

ER -

New growth technique for luminescent layers on silicon

Abstract

Keywords

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