TY - GEN
T1 - New 600V lateral superjunction power MOSFETs based on embedded non-uniform column structure
AU - Permthammasin, K.
AU - Wachutka, G.
AU - Schmitt, M.
AU - Kapels, H.
PY - 2006
Y1 - 2006
N2 - New lateral power MOSFETs employing two different, non-uniform, column-shaped superjunction (SJ) structures are proposed for use in smart power ICs that require voltage ratings up to 600V Using three-dimensional device simulations, the basic electrical characteristics of the new SJ MOSFETs have been evaluated, together with the effect of charge imbalance on the device performance. The simulation results show that the proposed devices exhibit excellent robustness against doping fluctuations, improve the specific on-resistance by as much as 47% compared to conventional RESURF LDMOS structures with similar voltage ratings, and can compete with existing other charge compensation devices.
AB - New lateral power MOSFETs employing two different, non-uniform, column-shaped superjunction (SJ) structures are proposed for use in smart power ICs that require voltage ratings up to 600V Using three-dimensional device simulations, the basic electrical characteristics of the new SJ MOSFETs have been evaluated, together with the effect of charge imbalance on the device performance. The simulation results show that the proposed devices exhibit excellent robustness against doping fluctuations, improve the specific on-resistance by as much as 47% compared to conventional RESURF LDMOS structures with similar voltage ratings, and can compete with existing other charge compensation devices.
UR - http://www.scopus.com/inward/record.url?scp=46749090581&partnerID=8YFLogxK
U2 - 10.1109/ASDAM.2006.331204
DO - 10.1109/ASDAM.2006.331204
M3 - Conference contribution
AN - SCOPUS:46749090581
SN - 1424403960
SN - 9781424403967
T3 - Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
SP - 263
EP - 266
BT - Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
T2 - 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
Y2 - 16 October 2006 through 18 October 2006
ER -