Negative differential conductance in cleaved edge overgrown surface superlattices

T. Feil, H. P. Tranitz, M. Reinwald, W. Wegscheider, M. Bichler, D. Schuh, G. Abstreiter, S. J. Allen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In situ overgrowth of an undoped GaAs/Al 0.3Ga 0.7As superlattice with a gate electrode separated by a barrier layer produces an array of strongly coupled quantum wires. The gate allows direct control of edge channel density. The observed transport properties are very sensitive to the transport channel length. Samples with long superlattices exhibit transport characteristics dominated by an inhomogeneous density and field distribution along the channel. In shorter superlattice samples a leakage current through the bulk superlattice stabilizes the field distribution in the two-dimensional channel and allows the observation of current-voltage characteristics that exhibit strong negative differential conductance without the formation of electric field domains.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages900-901
Number of pages2
DOIs
StatePublished - 30 Jun 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

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