Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing

Emilio Perez Bosch Quesada; Tommaso Rizzi; Aditya Gupta; Mamathamba K. Mahadevaiah; Andreas Schubert; Stefan Pechmann; Ruolan Jia; Max Uhlmann; Amelie Hagelauer; Christian Wenger; Eduardo Perez

doi:10.1109/CDE58627.2023.10339525

Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing

Emilio Perez Bosch Quesada, Tommaso Rizzi, Aditya Gupta, Mamathamba K. Mahadevaiah, Andreas Schubert, Stefan Pechmann, Ruolan Jia, Max Uhlmann, Amelie Hagelauer, Christian Wenger, Eduardo Perez

Chair of Micro- and Nanosystems Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This work presents a quasi-static electrical characterization of 1-transistor-1-resistor memristive structures designed following hardness-by-design techniques integrated in the CMOS fabrication process to assure multi-level capabilities in harsh radiation environments. Modulating the gate voltage of the enclosed layout transistor connected in series with the memristive device, it was possible to achieve excellent switching capabilities from a single high resistance state to a total of eight different low resistance states (more than 3 bits). Thus, the fabricated devices are suitable for their integration in larger in-memory computing systems and in multi-level memory applications.

Original language	English
Title of host publication	14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
Editors	E. Maset, C. Reig
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350302400
DOIs	https://doi.org/10.1109/CDE58627.2023.10339525
State	Published - 2023
Event	14th Spanish Conference on Electron Devices, CDE 2023 - Valencia, Spain Duration: 6 Jun 2023 → 8 Jun 2023

Publication series

Name	14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

Conference

Conference	14th Spanish Conference on Electron Devices, CDE 2023
Country/Territory	Spain
City	Valencia
Period	6/06/23 → 8/06/23

Keywords

Enclosed Layout Transistor
hardness-by-design
in-memory computing
memristive devices
radiation-hard

Access to Document

10.1109/CDE58627.2023.10339525

Cite this

Quesada, E. P. B., Rizzi, T., Gupta, A., Mahadevaiah, M. K., Schubert, A., Pechmann, S., Jia, R., Uhlmann, M., Hagelauer, A., Wenger, C., & Perez, E. (2023). Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing. In E. Maset, & C. Reig (Eds.), 14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings (14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CDE58627.2023.10339525

Quesada, Emilio Perez Bosch ; Rizzi, Tommaso ; Gupta, Aditya et al. / Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing. 14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings. editor / E. Maset ; C. Reig. Institute of Electrical and Electronics Engineers Inc., 2023. (14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings).

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title = "Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing",

abstract = "This work presents a quasi-static electrical characterization of 1-transistor-1-resistor memristive structures designed following hardness-by-design techniques integrated in the CMOS fabrication process to assure multi-level capabilities in harsh radiation environments. Modulating the gate voltage of the enclosed layout transistor connected in series with the memristive device, it was possible to achieve excellent switching capabilities from a single high resistance state to a total of eight different low resistance states (more than 3 bits). Thus, the fabricated devices are suitable for their integration in larger in-memory computing systems and in multi-level memory applications.",

keywords = "Enclosed Layout Transistor, hardness-by-design, in-memory computing, memristive devices, radiation-hard",

author = "Quesada, {Emilio Perez Bosch} and Tommaso Rizzi and Aditya Gupta and Mahadevaiah, {Mamathamba K.} and Andreas Schubert and Stefan Pechmann and Ruolan Jia and Max Uhlmann and Amelie Hagelauer and Christian Wenger and Eduardo Perez",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 14th Spanish Conference on Electron Devices, CDE 2023 ; Conference date: 06-06-2023 Through 08-06-2023",

year = "2023",

doi = "10.1109/CDE58627.2023.10339525",

language = "English",

series = "14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "E. Maset and C. Reig",

booktitle = "14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings",

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Quesada, EPB, Rizzi, T, Gupta, A, Mahadevaiah, MK, Schubert, A, Pechmann, S, Jia, R, Uhlmann, M, Hagelauer, A, Wenger, C & Perez, E 2023, Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing. in E Maset & C Reig (eds), 14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings. 14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 14th Spanish Conference on Electron Devices, CDE 2023, Valencia, Spain, 6/06/23. https://doi.org/10.1109/CDE58627.2023.10339525

Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing. / Quesada, Emilio Perez Bosch; Rizzi, Tommaso; Gupta, Aditya et al.
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings. ed. / E. Maset; C. Reig. Institute of Electrical and Electronics Engineers Inc., 2023. (14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing

AU - Quesada, Emilio Perez Bosch

AU - Rizzi, Tommaso

AU - Gupta, Aditya

AU - Mahadevaiah, Mamathamba K.

AU - Schubert, Andreas

AU - Pechmann, Stefan

AU - Jia, Ruolan

AU - Uhlmann, Max

AU - Hagelauer, Amelie

AU - Wenger, Christian

AU - Perez, Eduardo

PY - 2023

Y1 - 2023

N2 - This work presents a quasi-static electrical characterization of 1-transistor-1-resistor memristive structures designed following hardness-by-design techniques integrated in the CMOS fabrication process to assure multi-level capabilities in harsh radiation environments. Modulating the gate voltage of the enclosed layout transistor connected in series with the memristive device, it was possible to achieve excellent switching capabilities from a single high resistance state to a total of eight different low resistance states (more than 3 bits). Thus, the fabricated devices are suitable for their integration in larger in-memory computing systems and in multi-level memory applications.

AB - This work presents a quasi-static electrical characterization of 1-transistor-1-resistor memristive structures designed following hardness-by-design techniques integrated in the CMOS fabrication process to assure multi-level capabilities in harsh radiation environments. Modulating the gate voltage of the enclosed layout transistor connected in series with the memristive device, it was possible to achieve excellent switching capabilities from a single high resistance state to a total of eight different low resistance states (more than 3 bits). Thus, the fabricated devices are suitable for their integration in larger in-memory computing systems and in multi-level memory applications.

KW - Enclosed Layout Transistor

KW - hardness-by-design

KW - in-memory computing

KW - memristive devices

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DO - 10.1109/CDE58627.2023.10339525

M3 - Conference contribution

AN - SCOPUS:85182018605

T3 - 14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

BT - 14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

A2 - Maset, E.

A2 - Reig, C.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 14th Spanish Conference on Electron Devices, CDE 2023

Y2 - 6 June 2023 through 8 June 2023

ER -

Quesada EPB, Rizzi T, Gupta A, Mahadevaiah MK, Schubert A, Pechmann S et al. Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing. In Maset E, Reig C, editors, 14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings). doi: 10.1109/CDE58627.2023.10339525

Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing

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Keywords

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