Morphology and optical properties of InAs(N) quantum dots

O. Schumann, L. Geelhaar, H. Riechert, H. Cerva, G. Abstreiter

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

The optical properties and morphology of InAs(N) quantum dots (QD) were investigated. Solid source molecular beam epitaxy (MBER) was used to grow the QDs on GaAs(001) substrates, where a radiofrequency plasma source supplied the nitrogen. Photoluminescence (PL) spectroscopy, atomic force microscopy and transmission electron microscopy were used for characterization of the QDs. It was observed that large QDs were formed with increasing amount of nitrogen, and the small QDs grown in nitrogen free environment gradually disappeared. Misfit dislocations were found in the large QDs, which made them plastically relaxed.

Original languageEnglish
Pages (from-to)2832-2840
Number of pages9
JournalJournal of Applied Physics
Volume96
Issue number5
DOIs
StatePublished - 1 Sep 2004

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