Monitoring of H_yGaN_x and Ga in OMCVD of GaN, using molecular beam quadrupole and REMPI-TOF mass spectrometry

Keyphrases

• Chemical Vapor Deposition 100%
• Gallium 100%
• Quadrupole 100%
• Molecular Beam 100%
• TOF Mass Spectrometry 100%
• GaN Layers 100%
• REMPI-TOF 100%
• Growth Rate 50%
• Temperature Effect 50%
• Boundary Layer 50%
• Temperature Range 50%
• Thermal Decomposition 50%
• Nitrogen Compounds 50%
• Sapphire Substrate 50%
• REMPI 50%
• Single-source Precursor 50%
• Molecular Beam Sampling 50%
• Quadrupole Mass Spectrometry 50%
• Mass Resonance 50%
• Ionization Time-of-flight Mass Spectrometry 50%
• Precursor Method 50%

Chemistry

• Metallocene 100%
• Quadrupole 100%
• Mass Spectrometry 100%
• Molecular Beam 100%
• Resonance Enhanced Multiphoton Ionization (REMPI) 100%
• Chemical Vapor Deposition 100%
• Gallium 50%
• Pyrolysis 50%
• Nitrogen Compound 50%
• Time of Flight Mass Spectroscopy 50%
• Sapphire 50%
• Quadrupole Mass Spectroscopy 50%
• Gallium Atom 50%
• Resonance-Enhanced Multiphoton Ionization 50%