Monitoring of HyGaNx and Ga in OMCVD of GaN, using molecular beam quadrupole and REMPI-TOF mass spectrometry

Jörg Schäfer; Jürgen Wolfrum; Roland A. Fischer; Harald Sussek

doi:10.1016/S0009-2614(98)01319-0

Monitoring of H_yGaN_x and Ga in OMCVD of GaN, using molecular beam quadrupole and REMPI-TOF mass spectrometry

Jörg Schäfer, Jürgen Wolfrum, Roland A. Fischer, Harald Sussek

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Abstract

A new route in organometallic chemical vapour deposition (OMCVD) of GaN layers is the single-source precursor method. Molecular beam sampling using quadrupole mass spectrometry and resonance-enhanced multiphoton ionisation time-of-flight mass spectrometry (REMPI-TOF-MS) has been used to show that gallium atoms and gallium-nitrogen compounds, like HGaN_x (x=2-6) and GaN_x (x=2-6), appear in the boundary layer of a sapphire substrate during thermal decomposition of (N₃)₂Ga[CH₂CH₂CH₂N(CH ₃)₂] in the temperature range 400-1000 K. The temperature dependence of the species is shown to be directly correlated with the growth rate of GaN layers.

Original language	English
Pages (from-to)	152-156
Number of pages	5
Journal	Chemical Physics Letters
Volume	300
Issue number	1-2
DOIs	https://doi.org/10.1016/S0009-2614(98)01319-0
State	Published - 29 Jan 1999
Externally published	Yes

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@article{1668d694c14b412c8fe7a9dc21381134,

title = "Monitoring of HyGaNx and Ga in OMCVD of GaN, using molecular beam quadrupole and REMPI-TOF mass spectrometry",

abstract = "A new route in organometallic chemical vapour deposition (OMCVD) of GaN layers is the single-source precursor method. Molecular beam sampling using quadrupole mass spectrometry and resonance-enhanced multiphoton ionisation time-of-flight mass spectrometry (REMPI-TOF-MS) has been used to show that gallium atoms and gallium-nitrogen compounds, like HGaNx (x=2-6) and GaNx (x=2-6), appear in the boundary layer of a sapphire substrate during thermal decomposition of (N3)2Ga[CH2CH2CH2N(CH 3)2] in the temperature range 400-1000 K. The temperature dependence of the species is shown to be directly correlated with the growth rate of GaN layers.",

author = "J{\"o}rg Sch{\"a}fer and J{\"u}rgen Wolfrum and Fischer, {Roland A.} and Harald Sussek",

note = "Funding Information: This work was supported by the Volkswagen-Stiftung (grant No. I/72567) and by the Deutsche Forschungsgemeinschaft (DFG) within the Sonderforschungsbereich 359. ",

year = "1999",

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doi = "10.1016/S0009-2614(98)01319-0",

language = "English",

volume = "300",

pages = "152--156",

journal = "Chemical Physics Letters",

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number = "1-2",

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TY - JOUR

T1 - Monitoring of HyGaNx and Ga in OMCVD of GaN, using molecular beam quadrupole and REMPI-TOF mass spectrometry

AU - Schäfer, Jörg

AU - Wolfrum, Jürgen

AU - Fischer, Roland A.

AU - Sussek, Harald

N1 - Funding Information: This work was supported by the Volkswagen-Stiftung (grant No. I/72567) and by the Deutsche Forschungsgemeinschaft (DFG) within the Sonderforschungsbereich 359.

PY - 1999/1/29

Y1 - 1999/1/29

N2 - A new route in organometallic chemical vapour deposition (OMCVD) of GaN layers is the single-source precursor method. Molecular beam sampling using quadrupole mass spectrometry and resonance-enhanced multiphoton ionisation time-of-flight mass spectrometry (REMPI-TOF-MS) has been used to show that gallium atoms and gallium-nitrogen compounds, like HGaNx (x=2-6) and GaNx (x=2-6), appear in the boundary layer of a sapphire substrate during thermal decomposition of (N3)2Ga[CH2CH2CH2N(CH 3)2] in the temperature range 400-1000 K. The temperature dependence of the species is shown to be directly correlated with the growth rate of GaN layers.

AB - A new route in organometallic chemical vapour deposition (OMCVD) of GaN layers is the single-source precursor method. Molecular beam sampling using quadrupole mass spectrometry and resonance-enhanced multiphoton ionisation time-of-flight mass spectrometry (REMPI-TOF-MS) has been used to show that gallium atoms and gallium-nitrogen compounds, like HGaNx (x=2-6) and GaNx (x=2-6), appear in the boundary layer of a sapphire substrate during thermal decomposition of (N3)2Ga[CH2CH2CH2N(CH 3)2] in the temperature range 400-1000 K. The temperature dependence of the species is shown to be directly correlated with the growth rate of GaN layers.

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U2 - 10.1016/S0009-2614(98)01319-0

DO - 10.1016/S0009-2614(98)01319-0

M3 - Article

AN - SCOPUS:0040942662

SN - 0009-2614

VL - 300

SP - 152

EP - 156

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-2

ER -

Monitoring of H_yGaN_x and Ga in OMCVD of GaN, using molecular beam quadrupole and REMPI-TOF mass spectrometry

Abstract

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