Molybdenum impurity states in amorphous silicon and related materials

M. Stutzmann; J. Stuke

doi:10.1080/01418639108224436

Molybdenum impurity states in amorphous silicon and related materials

M. Stutzmann
, J. Stuke

Max Planck Institute for Solid State Research
Philipps-Universität Marburg

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The role of molybdenum as an electronically active impurity in amorphous silicon and other tetrahedrally bonded amorphous semiconductors is discussed. The presence of Mo can be detected via the paramagnetic Mo⁵⁺ ion, which gives rise to an electron spin resonance with a g value of 1·92-1·93. The formation of this ion is enhanced by the presence of oxygen during deposition of thin films. We present experimental evidence that molybdenum in amorphous silicon can form an impurity donor level and thus can have an influence on the electronic properties of nominally undoped samples. Potential sources of Mo during thin-film depositiion are also discussed.

Original language	English
Pages (from-to)	151-162
Number of pages	12
Journal	Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume	63
Issue number	1
DOIs	https://doi.org/10.1080/01418639108224436
State	Published - Jan 1991
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1080/01418639108224436

Cite this

@article{205d8b9045274455835508e59d053f8e,

title = "Molybdenum impurity states in amorphous silicon and related materials",

abstract = "The role of molybdenum as an electronically active impurity in amorphous silicon and other tetrahedrally bonded amorphous semiconductors is discussed. The presence of Mo can be detected via the paramagnetic Mo5+ ion, which gives rise to an electron spin resonance with a g value of 1·92-1·93. The formation of this ion is enhanced by the presence of oxygen during deposition of thin films. We present experimental evidence that molybdenum in amorphous silicon can form an impurity donor level and thus can have an influence on the electronic properties of nominally undoped samples. Potential sources of Mo during thin-film depositiion are also discussed.",

author = "M. Stutzmann and J. Stuke",

note = "Funding Information: We would like to thank H.-U. Habermeier for the preparation of the sputtered samples used in this study and W. Fuhs for helpful discussions. One of us (M.S.) acknowledges financial support by the Bundesminister fur Forschung und Technologie under contract 0328962A.",

year = "1991",

month = jan,

doi = "10.1080/01418639108224436",

language = "English",

volume = "63",

pages = "151--162",

journal = "Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties",

issn = "1364-2812",

publisher = "Taylor and Francis Ltd.",

number = "1",

}

TY - JOUR

T1 - Molybdenum impurity states in amorphous silicon and related materials

AU - Stutzmann, M.

AU - Stuke, J.

N1 - Funding Information: We would like to thank H.-U. Habermeier for the preparation of the sputtered samples used in this study and W. Fuhs for helpful discussions. One of us (M.S.) acknowledges financial support by the Bundesminister fur Forschung und Technologie under contract 0328962A.

PY - 1991/1

Y1 - 1991/1

N2 - The role of molybdenum as an electronically active impurity in amorphous silicon and other tetrahedrally bonded amorphous semiconductors is discussed. The presence of Mo can be detected via the paramagnetic Mo5+ ion, which gives rise to an electron spin resonance with a g value of 1·92-1·93. The formation of this ion is enhanced by the presence of oxygen during deposition of thin films. We present experimental evidence that molybdenum in amorphous silicon can form an impurity donor level and thus can have an influence on the electronic properties of nominally undoped samples. Potential sources of Mo during thin-film depositiion are also discussed.

AB - The role of molybdenum as an electronically active impurity in amorphous silicon and other tetrahedrally bonded amorphous semiconductors is discussed. The presence of Mo can be detected via the paramagnetic Mo5+ ion, which gives rise to an electron spin resonance with a g value of 1·92-1·93. The formation of this ion is enhanced by the presence of oxygen during deposition of thin films. We present experimental evidence that molybdenum in amorphous silicon can form an impurity donor level and thus can have an influence on the electronic properties of nominally undoped samples. Potential sources of Mo during thin-film depositiion are also discussed.

UR - https://www.scopus.com/pages/publications/0025948736

U2 - 10.1080/01418639108224436

DO - 10.1080/01418639108224436

M3 - Article

AN - SCOPUS:0025948736

SN - 1364-2812

VL - 63

SP - 151

EP - 162

JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

IS - 1

ER -

Molybdenum impurity states in amorphous silicon and related materials

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this