Abstract
High-speed double-heterostructure GaAs superluminescent diodes have been fabricated. Risetimes of 2 ns at optical linewidths of 10 nm have been achieved.
| Original language | English |
|---|---|
| Pages (from-to) | 291 |
| Number of pages | 1 |
| Journal | Electronics Letters |
| Volume | 13 |
| Issue number | 10 |
| DOIs | |
| State | Published - 12 May 1977 |
Keywords
- Light-emitting diodes
- Optical links
- Optical modulation
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