Modulation characteristics of double-heterostructure superluminescent diodes

W. Harth, M. C. Amann

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

High-speed double-heterostructure GaAs superluminescent diodes have been fabricated. Risetimes of 2 ns at optical linewidths of 10 nm have been achieved.

Original languageEnglish
Pages (from-to)291
Number of pages1
JournalElectronics Letters
Volume13
Issue number10
DOIs
StatePublished - 12 May 1977

Keywords

  • Light-emitting diodes
  • Optical links
  • Optical modulation

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