Modelocking of algaas laser diode by intracavity algaas phase-modulator

J. Bösl; R. Bauer; H. Rauch; U. Penning; G. Weimann; W. Schlapp

doi:10.1049/el:19890582

Modelocking of algaas laser diode by intracavity algaas phase-modulator

J. Bösl
, R. Bauer
, H. Rauch
, U. Penning
, G. Weimann
, W. Schlapp

Chair of Physics I

Technical University of Munich
Walter Schottky Institut
Forschungsinstitut der Deutschen Bundespost

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Active modelocking of an 830 nm AlGaAs laser diode by an intracavity AlGaAs phase-modulator is reported. The typical states of modelocking by pure phase-modulation, the even state, the odd state and double pulsing are demonstrated. The behaviour of a semiconductor laser in this experiment corresponds to that one known from the HeNe laser and Nd:YAG laser.

Original language	English
Pages (from-to)	864-866
Number of pages	3
Journal	Electronics Letters
Volume	25
Issue number	13
DOIs	https://doi.org/10.1049/el:19890582
State	Published - 22 Jun 1989

Keywords

LEDs
Modulators
Phase modulation
Semiconductor lasers

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10.1049/el:19890582

Cite this

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title = "Modelocking of algaas laser diode by intracavity algaas phase-modulator",

abstract = "Active modelocking of an 830 nm AlGaAs laser diode by an intracavity AlGaAs phase-modulator is reported. The typical states of modelocking by pure phase-modulation, the even state, the odd state and double pulsing are demonstrated. The behaviour of a semiconductor laser in this experiment corresponds to that one known from the HeNe laser and Nd:YAG laser.",

keywords = "LEDs, Modulators, Phase modulation, Semiconductor lasers",

author = "J. B{\"o}sl and R. Bauer and H. Rauch and U. Penning and G. Weimann and W. Schlapp",

year = "1989",

month = jun,

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doi = "10.1049/el:19890582",

language = "English",

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pages = "864--866",

journal = "Electronics Letters",

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T1 - Modelocking of algaas laser diode by intracavity algaas phase-modulator

AU - Bösl, J.

AU - Bauer, R.

AU - Rauch, H.

AU - Penning, U.

AU - Weimann, G.

AU - Schlapp, W.

PY - 1989/6/22

Y1 - 1989/6/22

N2 - Active modelocking of an 830 nm AlGaAs laser diode by an intracavity AlGaAs phase-modulator is reported. The typical states of modelocking by pure phase-modulation, the even state, the odd state and double pulsing are demonstrated. The behaviour of a semiconductor laser in this experiment corresponds to that one known from the HeNe laser and Nd:YAG laser.

AB - Active modelocking of an 830 nm AlGaAs laser diode by an intracavity AlGaAs phase-modulator is reported. The typical states of modelocking by pure phase-modulation, the even state, the odd state and double pulsing are demonstrated. The behaviour of a semiconductor laser in this experiment corresponds to that one known from the HeNe laser and Nd:YAG laser.

KW - LEDs

KW - Modulators

KW - Phase modulation

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/0024683760

U2 - 10.1049/el:19890582

DO - 10.1049/el:19890582

M3 - Article

AN - SCOPUS:0024683760

SN - 0013-5194

VL - 25

SP - 864

EP - 866

JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

Modelocking of algaas laser diode by intracavity algaas phase-modulator

Abstract

Keywords

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