Modelling of ion-induced charge generation in high voltage diodes

W. Kaindl; G. Sölkner; P. Voss; G. Wachutka

Modelling of ion-induced charge generation in high voltage diodes

W. Kaindl
, G. Sölkner
, P. Voss
, G. Wachutka

Computation, Information and Technology

Technical University of Munich

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

In this work we present a model which is able to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor power device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial evolutions of the electric field as well as the carrier densities in the interior of the device initiated by the ion-induced charge plasma. For sufficiently high biases strong charge multiplication suddenly sets on which conforms to recent experimental findings.

Original language	English
Pages	223-226
Number of pages	4
State	Published - 2001
Event	13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan Duration: 4 Jun 2001 → 7 Jun 2001

Conference

Conference	13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)
Country/Territory	Japan
City	Osaka
Period	4/06/01 → 7/06/01

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Cite this

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title = "Modelling of ion-induced charge generation in high voltage diodes",

abstract = "In this work we present a model which is able to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor power device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial evolutions of the electric field as well as the carrier densities in the interior of the device initiated by the ion-induced charge plasma. For sufficiently high biases strong charge multiplication suddenly sets on which conforms to recent experimental findings.",

author = "W. Kaindl and G. S{\"o}lkner and P. Voss and G. Wachutka",

year = "2001",

language = "English",

pages = "223--226",

note = "13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) ; Conference date: 04-06-2001 Through 07-06-2001",

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TY - CONF

T1 - Modelling of ion-induced charge generation in high voltage diodes

AU - Kaindl, W.

AU - Sölkner, G.

AU - Voss, P.

AU - Wachutka, G.

PY - 2001

Y1 - 2001

N2 - In this work we present a model which is able to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor power device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial evolutions of the electric field as well as the carrier densities in the interior of the device initiated by the ion-induced charge plasma. For sufficiently high biases strong charge multiplication suddenly sets on which conforms to recent experimental findings.

AB - In this work we present a model which is able to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor power device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial evolutions of the electric field as well as the carrier densities in the interior of the device initiated by the ion-induced charge plasma. For sufficiently high biases strong charge multiplication suddenly sets on which conforms to recent experimental findings.

UR - https://www.scopus.com/pages/publications/0034830050

M3 - Paper

AN - SCOPUS:0034830050

SP - 223

EP - 226

T2 - 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)

Y2 - 4 June 2001 through 7 June 2001

ER -

Modelling of ion-induced charge generation in high voltage diodes

Abstract

Conference

UN SDGs

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