Abstract
In this work we present a model which is able to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor power device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial evolutions of the electric field as well as the carrier densities in the interior of the device initiated by the ion-induced charge plasma. For sufficiently high biases strong charge multiplication suddenly sets on which conforms to recent experimental findings.
| Original language | English |
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| Pages | 223-226 |
| Number of pages | 4 |
| State | Published - 2001 |
| Event | 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan Duration: 4 Jun 2001 → 7 Jun 2001 |
Conference
| Conference | 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) |
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| Country/Territory | Japan |
| City | Osaka |
| Period | 4/06/01 → 7/06/01 |