Abstract
This article presents a new approach to the evaluation of the eigendynamics of interconnects encountered in high frequency power converters and high power semiconductor modules. It is based on a three-dimensional transient electromagnetic field analysis under realistic switching conditions which allows to investigate the various distributed parasitic effects caused by short switching times, steep current and voltage gradients and therefore large di/dt. The finite element simulator NM SESES™ has been extended by an electromagnetic kernel to solve these problems. The capability of the simulator is demonstrated by some illustrative examples.
| Original language | English |
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| Pages | 303-307 |
| Number of pages | 5 |
| State | Published - 2000 |
| Event | 12th International Symposium on Power Semiconductor Devices and ICs - Toulouse, France Duration: 22 May 2000 → 25 May 2000 |
Conference
| Conference | 12th International Symposium on Power Semiconductor Devices and ICs |
|---|---|
| Country/Territory | France |
| City | Toulouse |
| Period | 22/05/00 → 25/05/00 |
Keywords
- Bus bars
- Distributed parasitic effects
- Electromagnetic transient analysis
- Finite element method
- High power modules
- Skin effect