Modeling of the hysteretic metal-insulator transition in a vanadium dioxide infrared detector

Luiz Alberto Luz De Almeida, Gurdip Singh Deep, Antonio Marcus Nogueira Lima, Helmut Neff

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

The vanadium dioxide (VO2) thin film, usually employed as an infrared detector, exhibits hysteresis in its resistance-temperature characteristic. Considering a polycrystalline VO2 thin film as a composite medium, containing semiconducting and metallic microcrystals, the well-known effective-medium approximation theory is employed to relate the volume fraction of the semiconducting microcrystals to the effective film resistance. A phenomenological model is first proposed for describing the hysteretic dependence of volume fraction on temperature. From this, a model for hysteresis in the resistance-temperature characteristic is then derived, and a procedure for estimating the model parameters is outlined. The model reproduces the more important hysteretic characteristics such as the major, minor, and nested loops, in good agreement with the experimental characteristics.

Original languageEnglish
Pages (from-to)2582-2588
Number of pages7
JournalOptical Engineering
Volume41
Issue number10
DOIs
StatePublished - Oct 2002
Externally publishedYes

Keywords

  • Accommodation process
  • Composite medium
  • Effective-medium approximation
  • Hysteresis model
  • Infrared imaging
  • Major loop
  • Metal-insulator transition
  • Microbolometer
  • Minor loop
  • Percolation
  • Phase transition
  • Sensor
  • Thermal hysteresis
  • Vanadium dioxide

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