Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs

Gilson I. Wirth; Jeongwook Koh; Roberto da Silva; Roland Thewes; Ralf Brederlow

doi:10.1109/TED.2005.850955

Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs

Gilson I. Wirth
, Jeongwook Koh
, Roberto da Silva
, Roland Thewes
, Ralf Brederlow

UFRGS
State University of Rio Grande do Sul (UERGS)
Infineon Technologies AG
Samsung Electronics Co. Ltd.

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

The low-frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior of individual devices. Discrete quantities are used and analytical results for the statistical parameters are derived. Analytical equations for average value and standard deviation of noise power are provided. The model is compatible with standard compact models used for circuit simulation.

Original language	English
Pages (from-to)	1576-1588
Number of pages	13
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	7
DOIs	https://doi.org/10.1109/TED.2005.850955
State	Published - Jul 2005
Externally published	Yes

Keywords

Analog circuits
Low-frequency noise (LF-noise)
MOS transistors
Noise modeling
RF circuits
Semiconductor device noise

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10.1109/TED.2005.850955

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title = "Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs",

abstract = "The low-frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior of individual devices. Discrete quantities are used and analytical results for the statistical parameters are derived. Analytical equations for average value and standard deviation of noise power are provided. The model is compatible with standard compact models used for circuit simulation.",

keywords = "Analog circuits, Low-frequency noise (LF-noise), MOS transistors, Noise modeling, RF circuits, Semiconductor device noise",

author = "Wirth, \{Gilson I.\} and Jeongwook Koh and \{da Silva\}, Roberto and Roland Thewes and Ralf Brederlow",

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AU - Wirth, Gilson I.

AU - Koh, Jeongwook

AU - da Silva, Roberto

AU - Thewes, Roland

AU - Brederlow, Ralf

PY - 2005/7

Y1 - 2005/7

N2 - The low-frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior of individual devices. Discrete quantities are used and analytical results for the statistical parameters are derived. Analytical equations for average value and standard deviation of noise power are provided. The model is compatible with standard compact models used for circuit simulation.

AB - The low-frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior of individual devices. Discrete quantities are used and analytical results for the statistical parameters are derived. Analytical equations for average value and standard deviation of noise power are provided. The model is compatible with standard compact models used for circuit simulation.

KW - Analog circuits

KW - Low-frequency noise (LF-noise)

KW - MOS transistors

KW - Noise modeling

KW - RF circuits

KW - Semiconductor device noise

UR - https://www.scopus.com/pages/publications/23944493427

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M3 - Article

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EP - 1588

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -

Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs

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Keywords

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