Modeling of purely strain-induced CEO GaAs/In 0.16Al 0.84As quantum wires

Stefan Birner, Robert Schuster, Michael Povolotskyi, Peter Vogl

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We theoretically studied strained quantum wire structures that were grown using the cleaved edge overgrowth technique. Calculations of the strain distribution and wave functions are presented as a tool for optimizing the sample layout in order to enhance confinement energies. The electron and hole wave functions are spatially separated due to the piezoelectric effect. Our numerical simulations show that the confinement energy rises as expected with the thickness of the stressor layer and the width of the overgrown quantum well in agreement with spatially resolved photoluminescence measurements.

Original languageEnglish
Title of host publicationNUSOD '05 - Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices
Pages1-2
Number of pages2
DOIs
StatePublished - 2005
EventNUSOD '05 - 5th International Conference on Numerical Simulation of Optoelectronic Devices - Berlin, Germany
Duration: 19 Sep 200522 Sep 2005

Publication series

NameNUSOD '05 - Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices
Volume2005

Conference

ConferenceNUSOD '05 - 5th International Conference on Numerical Simulation of Optoelectronic Devices
Country/TerritoryGermany
CityBerlin
Period19/09/0522/09/05

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