Modeling of filamentary conduction in organic thin film memories and comparison with experimental data

Francesco Santoni; Alessio Gagliardi; Matthias Auf Der Maur; Alessandro Pecchia; Sebastian Nau; Stefan Sax; Emil J.W. List-Kratochvil; Aldo Di Carlo

doi:10.1109/TNANO.2015.2496726

Modeling of filamentary conduction in organic thin film memories and comparison with experimental data

Francesco Santoni
, Alessio Gagliardi
, Matthias Auf Der Maur
, Alessandro Pecchia
, Sebastian Nau
, Stefan Sax
, Emil J.W. List-Kratochvil
, Aldo Di Carlo

Associate Professorship of Simulation of Nanosystems for Energy Conversion

University of Rome Tor Vergata
ISMN-CNR
NanoTecCenter Weiz Forschungsgesellschaft mbH
Graz University of Technology (TU Graz)

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Following the experimental evidences of filament forming in organic thin film memories, we developed a semiclassical drift-diffusion model of electrical conductivity in the filament. We show that the global behavior of a memory device and the total current can be accounted for by fully-formed and well-connected filaments. We investigated and ruled out the eventual influence of coherent quantum tunneling in disconnected filaments. It is also shown how a heating model of the filament can be used to check if assumptions on the number of filaments and their radii are physically plausible.

Original language	English
Article number	7314975
Pages (from-to)	60-69
Number of pages	10
Journal	IEEE Transactions on Nanotechnology
Volume	15
Issue number	1
DOIs	https://doi.org/10.1109/TNANO.2015.2496726
State	Published - Jan 2016

Keywords

Filaments
RRAM
Resistive switching

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10.1109/TNANO.2015.2496726

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title = "Modeling of filamentary conduction in organic thin film memories and comparison with experimental data",

abstract = "Following the experimental evidences of filament forming in organic thin film memories, we developed a semiclassical drift-diffusion model of electrical conductivity in the filament. We show that the global behavior of a memory device and the total current can be accounted for by fully-formed and well-connected filaments. We investigated and ruled out the eventual influence of coherent quantum tunneling in disconnected filaments. It is also shown how a heating model of the filament can be used to check if assumptions on the number of filaments and their radii are physically plausible.",

keywords = "Filaments, RRAM, Resistive switching",

author = "Francesco Santoni and Alessio Gagliardi and \{Auf Der Maur\}, Matthias and Alessandro Pecchia and Sebastian Nau and Stefan Sax and List-Kratochvil, \{Emil J.W.\} and \{Di Carlo\}, Aldo",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2016",

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doi = "10.1109/TNANO.2015.2496726",

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T1 - Modeling of filamentary conduction in organic thin film memories and comparison with experimental data

AU - Santoni, Francesco

AU - Gagliardi, Alessio

AU - Auf Der Maur, Matthias

AU - Pecchia, Alessandro

AU - Nau, Sebastian

AU - Sax, Stefan

AU - List-Kratochvil, Emil J.W.

AU - Di Carlo, Aldo

PY - 2016/1

Y1 - 2016/1

N2 - Following the experimental evidences of filament forming in organic thin film memories, we developed a semiclassical drift-diffusion model of electrical conductivity in the filament. We show that the global behavior of a memory device and the total current can be accounted for by fully-formed and well-connected filaments. We investigated and ruled out the eventual influence of coherent quantum tunneling in disconnected filaments. It is also shown how a heating model of the filament can be used to check if assumptions on the number of filaments and their radii are physically plausible.

AB - Following the experimental evidences of filament forming in organic thin film memories, we developed a semiclassical drift-diffusion model of electrical conductivity in the filament. We show that the global behavior of a memory device and the total current can be accounted for by fully-formed and well-connected filaments. We investigated and ruled out the eventual influence of coherent quantum tunneling in disconnected filaments. It is also shown how a heating model of the filament can be used to check if assumptions on the number of filaments and their radii are physically plausible.

KW - Filaments

KW - RRAM

KW - Resistive switching

UR - https://www.scopus.com/pages/publications/84963818676

U2 - 10.1109/TNANO.2015.2496726

DO - 10.1109/TNANO.2015.2496726

M3 - Article

AN - SCOPUS:84963818676

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VL - 15

SP - 60

EP - 69

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 1

M1 - 7314975

ER -

Modeling of filamentary conduction in organic thin film memories and comparison with experimental data

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Keywords

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