Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology

T. Kuenzig, G. Schrag, J. Iannacci

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We present a comprehensive study on a high reliability RF-MEMS switch with an active thermal recovery capability to counteract stiction. Applying finite element (FE) simulations we investigate the complete recovery process including mechanical, electrical, thermal and fluidic effects. The experimentally calibrated thermo-mechanical FE-model is used to extract key parameters of the recovery process. Therewith we are able to estimate the efficiency of the recovery capability and to figure out possible design improvements in order to optimize the investigated switch with respect to reliability.

Original languageEnglish
Pages (from-to)2235-2239
Number of pages5
JournalMicroelectronics Reliability
Volume52
Issue number9-10
DOIs
StatePublished - Sep 2012

Fingerprint

Dive into the research topics of 'Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology'. Together they form a unique fingerprint.

Cite this