TY - GEN
T1 - Modeling and fast simulation of RF-MEMS switches within standard IC design frameworks
AU - Niessner, M.
AU - Schrag, G.
AU - Wachutka, G.
AU - Iannacci, J.
PY - 2010
Y1 - 2010
N2 - We present a macromodel of an electrostatically actuated and viscously damped ohmic contact RF-MEMS switch suitable for direct implementation in standard IC design frameworks. The physics-based and multi-energy domain coupled model is systematically derived on the basis of a hierarchical modeling approach. The very good agreement with measurements proves the capability of the model to predict the behavior of the RF-MEMS switch. Especially effects due to the nonlinear coupling of the different energy domains are correctly reproduced. The accurate reproduction of heavily contact-related situations within acceptable computing time is identified as an issue for future research.
AB - We present a macromodel of an electrostatically actuated and viscously damped ohmic contact RF-MEMS switch suitable for direct implementation in standard IC design frameworks. The physics-based and multi-energy domain coupled model is systematically derived on the basis of a hierarchical modeling approach. The very good agreement with measurements proves the capability of the model to predict the behavior of the RF-MEMS switch. Especially effects due to the nonlinear coupling of the different energy domains are correctly reproduced. The accurate reproduction of heavily contact-related situations within acceptable computing time is identified as an issue for future research.
UR - http://www.scopus.com/inward/record.url?scp=78649628903&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2010.5604496
DO - 10.1109/SISPAD.2010.5604496
M3 - Conference contribution
AN - SCOPUS:78649628903
SN - 9781424476992
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 317
EP - 320
BT - 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
T2 - 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Y2 - 6 September 2010 through 8 September 2010
ER -