@inproceedings{966f828bce5747e795a9dd06820a7bc0,
title = "Model of Substrate Capacitance of MOSFET RF Switch Inspired by Inverted Microstrip Line",
abstract = "The subject of the paper is substrate capacitance modeling for MOSFET-based RF switches on high-ohmic silicon substrates. Microstrip line computational models are applied for calculating the capacitance. It is proposed to use inverted microstrip line model for the flip-chip IC mounting configuration. The model-to-hardware correlation has been demonstrated on a prototype switch IC fabricated in a dedicated 130 nm bulk-CMOS technology. The calculated switch RF breakdown voltages (serving as an indicator for the substrate capacitance) of 56 V and 54.8 V was measured to be 55.4 V and 51.4 V for the wire-bonded and flip-chip ICs respectively.",
keywords = "Antenna tuning, CMOS switch, RF front-end, flip-chip mounting, high-voltage RF switch, wire-bonding",
author = "Valentyn Solomko and Oguzhan Oezdamar and Robert Weigel and Amelie Hagelauer",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 51st IEEE European Solid-State Device Research Conference, ESSDERC 2021 ; Conference date: 06-09-2021 Through 09-09-2021",
year = "2021",
doi = "10.1109/ESSDERC53440.2021.9631806",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "Editions Frontieres",
pages = "207--210",
booktitle = "ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference, Proceedings",
}