Model of room-temperature resonant-tunneling current in metal/insulator and insulator/insulator heterostructures

C. Strahberger, P. Vogl

Research output: Contribution to journalArticlepeer-review

45 Scopus citations


Employing a multiband scattering formalism for ballistic tunneling currents, a systematic theoretical study of the current-voltage characteristics of metal-insulator and insulator-based resonant-tunneling diodes is presented. We predict ultrathin metal(CoSi2)/insulator(CaF2) and insulator(CdF2)/insulator(CaF2) heterostructures on silicon substrates to be excellent candidates for room-temperature quantum-effect devices. The scattering formalism in the framework of tight-binding theory is cast in a particularly compact and transparent form that is applicable to long-range tight-binding interactions and complex unit cells. The results are in good agreement with experimental data. The physical origin of the distinct current resonances, particularly in the metal/insulator structures, is explained in detail and found to originate in the localized character of the transition-metal d states. Furthermore, the stability of the resonance characteristics with regard to layer thickness variations, substrate orientations, and interface roughness is predicted.

Original languageEnglish
Pages (from-to)7289-7297
Number of pages9
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
StatePublished - 15 Sep 2000
Externally publishedYes


Dive into the research topics of 'Model of room-temperature resonant-tunneling current in metal/insulator and insulator/insulator heterostructures'. Together they form a unique fingerprint.

Cite this