MOCVD of TIO2 thin films on OTS modified SI(100) substrates by micro-contact printing (μCP): Selective growth and new characterization technique with micro-raman spectroscopy

B. C. Kang, J. H. Lee, D. Y. Jung, A. Devi, R. Bhakta, R. A. Fischer, S. H. Hong, J. H. Boo

Research output: Contribution to conferencePaperpeer-review

Abstract

The selective deposition of anatase TiO22 thin films on Si(100) substrates by combination of micro-contact printing (μCP) and metal-organic chemical vapor deposition (MOCVD) is carried out. For preparing the patterned Si(100) substrates, μCP method was adapted to make self-assembled monolayers (SAMs) using an organic molecule such as octadecyltrichlorosilane (OTS). This was followed by the deposition of TiO2 thin films on OTS patterned Si(100) substrates with [Ti(OiPr)2(tbaoac)2] (tbaoac = tertiarybutyl-acetoacetate). Selective growth of TiO2 was achieved in a home-built horizontal MOCVD reactor in the temperature range of 300 - 500°C and deposition pressure of 3 × 10-2 Torr. We could prove the selectivity of TiO2 thin films using optical microscope (OM), scanning electron microscope (SEM), and atomic force microscope (AFM) images as well as micro-Raman spectroscopic analysis.

Original languageEnglish
Pages320-325
Number of pages6
StatePublished - 2005
Externally publishedYes
Event15th European Conference on Chemical Vapor Deposition, EUROCVD-15 - Bochum, Germany
Duration: 5 Sep 20059 Sep 2005

Conference

Conference15th European Conference on Chemical Vapor Deposition, EUROCVD-15
Country/TerritoryGermany
CityBochum
Period5/09/059/09/05

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