Abstract
Free-standing GaN substrates of up to 2″ diameter can be produced by delamination of thick HVPE (hydride vapour phase epitaxy) films from sapphire with a laser-induced liftoff process. Homoepitaxial films of up to 2 μm thickness were grown on the Ga-face and N-face of these substrates with a low-pressure MOCVD system. The pre-overgrowth polishing of the substrates influences the final surface morphology and growth modus, which also depend on the crystal polarity. PL spectra resolve the bound and free exciton peaks from the overgrown GaN.
| Original language | English |
|---|---|
| Pages (from-to) | 443-446 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 176 |
| Issue number | 1 |
| DOIs | |
| State | Published - Nov 1999 |
| Event | Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France Duration: 4 Jul 1999 → 9 Jul 1999 |