Mobility of holes and suppression of antiferromagnetic order in (formula presented)

M. Hücker; V. Kataev; J. Pommer; J. Harraß; A. Hosni; C. Pflitsch; R. Gross; B. Büchner

doi:10.1103/PhysRevB.59.R725

Mobility of holes and suppression of antiferromagnetic order in (formula presented)

M. Hücker, V. Kataev, J. Pommer, J. Harraß, A. Hosni, C. Pflitsch, R. Gross, B. Büchner

University of Cologne

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

We have measured the static magnetic susceptibility and the resistivity of Zn (Formula presented) and Sr (Formula presented) doped (Formula presented) Our data clearly show that Zn impurities lead to an increase of the Néel temperature (Formula presented) in weakly hole doped compounds. This increase of (Formula presented) correlates with an increase of the resistivity. The analysis of our data strongly suggests that the hole mobility is the most important source for the strong suppression of antiferromagnetic order in (Formula presented)

Original language	English
Pages (from-to)	R725-R728
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	59
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevB.59.R725
State	Published - 1999
Externally published	Yes

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10.1103/PhysRevB.59.R725

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title = "Mobility of holes and suppression of antiferromagnetic order in (formula presented)",

abstract = "We have measured the static magnetic susceptibility and the resistivity of Zn (Formula presented) and Sr (Formula presented) doped (Formula presented) Our data clearly show that Zn impurities lead to an increase of the N{\'e}el temperature (Formula presented) in weakly hole doped compounds. This increase of (Formula presented) correlates with an increase of the resistivity. The analysis of our data strongly suggests that the hole mobility is the most important source for the strong suppression of antiferromagnetic order in (Formula presented)",

author = "M. H{\"u}cker and V. Kataev and J. Pommer and J. Harra{\ss} and A. Hosni and C. Pflitsch and R. Gross and B. B{\"u}chner",

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doi = "10.1103/PhysRevB.59.R725",

language = "English",

volume = "59",

pages = "R725--R728",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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T1 - Mobility of holes and suppression of antiferromagnetic order in (formula presented)

AU - Hücker, M.

AU - Kataev, V.

AU - Pommer, J.

AU - Harraß, J.

AU - Hosni, A.

AU - Pflitsch, C.

AU - Gross, R.

AU - Büchner, B.

PY - 1999

Y1 - 1999

N2 - We have measured the static magnetic susceptibility and the resistivity of Zn (Formula presented) and Sr (Formula presented) doped (Formula presented) Our data clearly show that Zn impurities lead to an increase of the Néel temperature (Formula presented) in weakly hole doped compounds. This increase of (Formula presented) correlates with an increase of the resistivity. The analysis of our data strongly suggests that the hole mobility is the most important source for the strong suppression of antiferromagnetic order in (Formula presented)

AB - We have measured the static magnetic susceptibility and the resistivity of Zn (Formula presented) and Sr (Formula presented) doped (Formula presented) Our data clearly show that Zn impurities lead to an increase of the Néel temperature (Formula presented) in weakly hole doped compounds. This increase of (Formula presented) correlates with an increase of the resistivity. The analysis of our data strongly suggests that the hole mobility is the most important source for the strong suppression of antiferromagnetic order in (Formula presented)

UR - http://www.scopus.com/inward/record.url?scp=0000494681&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.59.R725

DO - 10.1103/PhysRevB.59.R725

M3 - Article

AN - SCOPUS:0000494681

SN - 1098-0121

VL - 59

SP - R725-R728

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 2

ER -

Mobility of holes and suppression of antiferromagnetic order in (formula presented)

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