Mobility enhancement of two-dimensional holes in strained Si/SiGe MOSFETs

R. Oberhuber, G. Zandler, P. Vogl

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We present quantitative predictions of the hole mobility of p-type strained Si MOSFET's fabricated on a SiGe buffer. We have employed a self-consistent k p - model for the strained band structure and confined electronic subband states in the inversion channel and performed Monte Carlo simulations which take into account all relevant scattering mechanisms. For a Geconcentration of 30 % in the substrate, we predict a mobility enhancement of a factor of 2.3 compared to the unstrained p-type device. The calculated low field mobility is in excellent agreement with experimental data for strained Si/Sio.8Ge0.2 and for unstrained Si p-MOSFET's.

Original languageEnglish
Title of host publicationESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference
EditorsA. Touboul, Y. Danto, H. Grunbacher
PublisherIEEE Computer Society
Pages524-527
Number of pages4
ISBN (Electronic)2863322346
StatePublished - 1998
Externally publishedYes
Event28th European Solid-State Device Research Conference, ESSDERC 1998 - Bordeaux, France
Duration: 8 Sep 199810 Sep 1998

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference28th European Solid-State Device Research Conference, ESSDERC 1998
Country/TerritoryFrance
CityBordeaux
Period8/09/9810/09/98

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