Abstract
The matching behavior of drain current ID and small signal parameters transconductance gm and differential output conductance gDS of MOSFETs is investigated under typical analog operating conditions. Whereas for the normalized standard deviations of ID and gm the well known proportionality to (W×Leff)-1/2 is obtained, the normalized standard deviation of gDS clearly deviates from this width and length dependence. For this parameter, a proportionality to W-1/2 is found.
Original language | English |
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Pages (from-to) | 552-553 |
Number of pages | 2 |
Journal | IEEE Electron Device Letters |
Volume | 21 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2000 |
Externally published | Yes |