Abstract
The non-equilibrium transport of electrons confined at an atomically sharp interface and subject to a periodic potential is studied. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data is qualitatively consistent with the Esaki-Tsu transport model. We emphasize the significance of the two-dimensionality of the electron system and the gate to inhibit domain formation. Additional features in the source-drain current are attributed to Bloch-phonon resonances.
| Original language | English |
|---|---|
| Pages (from-to) | 281-284 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 12 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Jan 2002 |
| Event | 14th International Conference on the - Prague, Czech Republic Duration: 30 Jul 2001 → 3 Aug 2001 |
Keywords
- Field effect transistor
- Lateral superlattice
- Negative differential resistance
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