Miniband transport in vertical superlattice field effect transistors

R. A. Deutschmann; W. Wegscheider; M. Rother; M. Bichler; G. Abstreiter

doi:10.1016/S1386-9477(01)00373-3

Miniband transport in vertical superlattice field effect transistors

R. A. Deutschmann, W. Wegscheider, M. Rother, M. Bichler, G. Abstreiter

Natural Sciences

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The non-equilibrium transport of electrons confined at an atomically sharp interface and subject to a periodic potential is studied. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data is qualitatively consistent with the Esaki-Tsu transport model. We emphasize the significance of the two-dimensionality of the electron system and the gate to inhibit domain formation. Additional features in the source-drain current are attributed to Bloch-phonon resonances.

Original language	English
Pages (from-to)	281-284
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	12
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(01)00373-3
State	Published - Jan 2002
Event	14th International Conference on the - Prague, Czech Republic Duration: 30 Jul 2001 → 3 Aug 2001

Keywords

Field effect transistor
Lateral superlattice
Negative differential resistance

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10.1016/S1386-9477(01)00373-3

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title = "Miniband transport in vertical superlattice field effect transistors",

abstract = "The non-equilibrium transport of electrons confined at an atomically sharp interface and subject to a periodic potential is studied. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data is qualitatively consistent with the Esaki-Tsu transport model. We emphasize the significance of the two-dimensionality of the electron system and the gate to inhibit domain formation. Additional features in the source-drain current are attributed to Bloch-phonon resonances.",

keywords = "Field effect transistor, Lateral superlattice, Negative differential resistance",

author = "Deutschmann, {R. A.} and W. Wegscheider and M. Rother and M. Bichler and G. Abstreiter",

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T1 - Miniband transport in vertical superlattice field effect transistors

AU - Deutschmann, R. A.

AU - Wegscheider, W.

AU - Rother, M.

AU - Bichler, M.

AU - Abstreiter, G.

PY - 2002/1

Y1 - 2002/1

N2 - The non-equilibrium transport of electrons confined at an atomically sharp interface and subject to a periodic potential is studied. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data is qualitatively consistent with the Esaki-Tsu transport model. We emphasize the significance of the two-dimensionality of the electron system and the gate to inhibit domain formation. Additional features in the source-drain current are attributed to Bloch-phonon resonances.

AB - The non-equilibrium transport of electrons confined at an atomically sharp interface and subject to a periodic potential is studied. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data is qualitatively consistent with the Esaki-Tsu transport model. We emphasize the significance of the two-dimensionality of the electron system and the gate to inhibit domain formation. Additional features in the source-drain current are attributed to Bloch-phonon resonances.

KW - Field effect transistor

KW - Lateral superlattice

KW - Negative differential resistance

UR - http://www.scopus.com/inward/record.url?scp=0035239544&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(01)00373-3

DO - 10.1016/S1386-9477(01)00373-3

M3 - Conference article

AN - SCOPUS:0035239544

SN - 1386-9477

VL - 12

SP - 281

EP - 284

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

T2 - 14th International Conference on the

Y2 - 30 July 2001 through 3 August 2001

ER -

Miniband transport in vertical superlattice field effect transistors

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Keywords

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