Miniband transport in vertical superlattice field-effect transistors

R. A. Deutschmann; W. Wegscheider; M. Rother; M. Bichler; G. Abstreiter

doi:10.1063/1.1390320

Miniband transport in vertical superlattice field-effect transistors

R. A. Deutschmann, W. Wegscheider, M. Rother, M. Bichler, G. Abstreiter

Natural Sciences

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We study the nonequilibrium transport of two-dimensional electrons through a periodic potential. Our samples are fabricated using the cleaved-edge overgrowth technique to provide a vertical field-effect transistor with an undoped GaAs/AlGaAs superlattice channel orthogonal to the current flow. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data are qualitatively consistent with the Esaki-Tsu transport model in minibands, which we calculate for the given samples. We emphasize the significance of the two-dimensionality of the electron system and the gate to inhibit domain formation. Weak features in the source-drain current are attributed to Bloch-phonon resonances.

Original language	English
Pages (from-to)	1564-1566
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	10
DOIs	https://doi.org/10.1063/1.1390320
State	Published - 3 Sep 2001

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@article{d57265010f3e4a319fb8c15ac3269747,

title = "Miniband transport in vertical superlattice field-effect transistors",

abstract = "We study the nonequilibrium transport of two-dimensional electrons through a periodic potential. Our samples are fabricated using the cleaved-edge overgrowth technique to provide a vertical field-effect transistor with an undoped GaAs/AlGaAs superlattice channel orthogonal to the current flow. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data are qualitatively consistent with the Esaki-Tsu transport model in minibands, which we calculate for the given samples. We emphasize the significance of the two-dimensionality of the electron system and the gate to inhibit domain formation. Weak features in the source-drain current are attributed to Bloch-phonon resonances.",

author = "Deutschmann, \{R. A.\} and W. Wegscheider and M. Rother and M. Bichler and G. Abstreiter",

year = "2001",

month = sep,

day = "3",

doi = "10.1063/1.1390320",

language = "English",

volume = "79",

pages = "1564--1566",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Miniband transport in vertical superlattice field-effect transistors

AU - Deutschmann, R. A.

AU - Wegscheider, W.

AU - Rother, M.

AU - Bichler, M.

AU - Abstreiter, G.

PY - 2001/9/3

Y1 - 2001/9/3

N2 - We study the nonequilibrium transport of two-dimensional electrons through a periodic potential. Our samples are fabricated using the cleaved-edge overgrowth technique to provide a vertical field-effect transistor with an undoped GaAs/AlGaAs superlattice channel orthogonal to the current flow. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data are qualitatively consistent with the Esaki-Tsu transport model in minibands, which we calculate for the given samples. We emphasize the significance of the two-dimensionality of the electron system and the gate to inhibit domain formation. Weak features in the source-drain current are attributed to Bloch-phonon resonances.

AB - We study the nonequilibrium transport of two-dimensional electrons through a periodic potential. Our samples are fabricated using the cleaved-edge overgrowth technique to provide a vertical field-effect transistor with an undoped GaAs/AlGaAs superlattice channel orthogonal to the current flow. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data are qualitatively consistent with the Esaki-Tsu transport model in minibands, which we calculate for the given samples. We emphasize the significance of the two-dimensionality of the electron system and the gate to inhibit domain formation. Weak features in the source-drain current are attributed to Bloch-phonon resonances.

UR - http://www.scopus.com/inward/record.url?scp=0347713612&partnerID=8YFLogxK

U2 - 10.1063/1.1390320

DO - 10.1063/1.1390320

M3 - Article

AN - SCOPUS:0347713612

SN - 0003-6951

VL - 79

SP - 1564

EP - 1566

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Miniband transport in vertical superlattice field-effect transistors

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