Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs

R. Meisels; K. Dybko; F. Ziouzia; F. Kuchar; R. Deutschmann; G. Abstreiter; G. Hein; K. Pierz

doi:10.1016/S1386-9477(01)00053-4

Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs

R. Meisels, K. Dybko, F. Ziouzia, F. Kuchar, R. Deutschmann, G. Abstreiter, G. Hein, K. Pierz

Natural Sciences

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3 Scopus citations

Abstract

The spin properties of the 2DES in AlGaAs/GaAs heterostructures are studied via the electron spin resonance (ESR) of conduction electrons and via the temperature dependence of the DC-σ_xx(B) conductivity component. The ESR is investigated at integer (ν = 1) and fractional filling factors (ν < 1) via the change ΔR_xx of the magnetoresistance in high- and low-mobility samples. The DC-σ_xx(B) peaks in the integer quantum Hall effect regime show scaling behaviour. The peak widths obey power laws with exponents of about 0.4 (strong spin splitting) and 0.2 (no spin splitting, one critical energy in the Landau level centre). By assuming two critical energies in the latter case we obtain exponents close to 0.4.

Original language	English
Pages (from-to)	57-61
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	10
Issue number	1-3
DOIs	https://doi.org/10.1016/S1386-9477(01)00053-4
State	Published - May 2001

Keywords

Electron spin resonance
GaAs/GaAlAs heterostructure
Quantum Hall effect
Two-dimensional electron system

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10.1016/S1386-9477(01)00053-4

Cite this

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title = "Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs",

abstract = "The spin properties of the 2DES in AlGaAs/GaAs heterostructures are studied via the electron spin resonance (ESR) of conduction electrons and via the temperature dependence of the DC-σxx(B) conductivity component. The ESR is investigated at integer (ν = 1) and fractional filling factors (ν < 1) via the change ΔRxx of the magnetoresistance in high- and low-mobility samples. The DC-σxx(B) peaks in the integer quantum Hall effect regime show scaling behaviour. The peak widths obey power laws with exponents of about 0.4 (strong spin splitting) and 0.2 (no spin splitting, one critical energy in the Landau level centre). By assuming two critical energies in the latter case we obtain exponents close to 0.4.",

keywords = "Electron spin resonance, GaAs/GaAlAs heterostructure, Quantum Hall effect, Two-dimensional electron system",

author = "R. Meisels and K. Dybko and F. Ziouzia and F. Kuchar and R. Deutschmann and G. Abstreiter and G. Hein and K. Pierz",

year = "2001",

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doi = "10.1016/S1386-9477(01)00053-4",

language = "English",

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pages = "57--61",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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publisher = "Elsevier B.V.",

number = "1-3",

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TY - JOUR

T1 - Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs

AU - Meisels, R.

AU - Dybko, K.

AU - Ziouzia, F.

AU - Kuchar, F.

AU - Deutschmann, R.

AU - Abstreiter, G.

AU - Hein, G.

AU - Pierz, K.

PY - 2001/5

Y1 - 2001/5

N2 - The spin properties of the 2DES in AlGaAs/GaAs heterostructures are studied via the electron spin resonance (ESR) of conduction electrons and via the temperature dependence of the DC-σxx(B) conductivity component. The ESR is investigated at integer (ν = 1) and fractional filling factors (ν < 1) via the change ΔRxx of the magnetoresistance in high- and low-mobility samples. The DC-σxx(B) peaks in the integer quantum Hall effect regime show scaling behaviour. The peak widths obey power laws with exponents of about 0.4 (strong spin splitting) and 0.2 (no spin splitting, one critical energy in the Landau level centre). By assuming two critical energies in the latter case we obtain exponents close to 0.4.

AB - The spin properties of the 2DES in AlGaAs/GaAs heterostructures are studied via the electron spin resonance (ESR) of conduction electrons and via the temperature dependence of the DC-σxx(B) conductivity component. The ESR is investigated at integer (ν = 1) and fractional filling factors (ν < 1) via the change ΔRxx of the magnetoresistance in high- and low-mobility samples. The DC-σxx(B) peaks in the integer quantum Hall effect regime show scaling behaviour. The peak widths obey power laws with exponents of about 0.4 (strong spin splitting) and 0.2 (no spin splitting, one critical energy in the Landau level centre). By assuming two critical energies in the latter case we obtain exponents close to 0.4.

KW - Electron spin resonance

KW - GaAs/GaAlAs heterostructure

KW - Quantum Hall effect

KW - Two-dimensional electron system

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U2 - 10.1016/S1386-9477(01)00053-4

DO - 10.1016/S1386-9477(01)00053-4

M3 - Article

AN - SCOPUS:0035338077

SN - 1386-9477

VL - 10

SP - 57

EP - 61

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-3

ER -

Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs

Abstract

Keywords

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