@inproceedings{a2f704a281514e18ae977f0fcbf33027,
title = "Mid-Infrared VCSELs with Structured Low Loss Tunnel Junctions",
abstract = "Electrically pumped vertical cavity surface emitting lasers (VCSELs) operating at 3.4 μm are demonstrated using a low-loss buried tunnel junction (BTJ) based on a structured semi-metallic interface between GaSb and InAs/AlSb superlattice. In contrast to traditional BTJ VCSELs based on a structured interface between highly n- and p-doped layers, the new tunnel junction has orders of magnitude lower optical loss, while providing similar optical and current confinements. VCSEL operation is demonstrated in pulsed mode up to 20 °C.",
keywords = "buried tunnel junction, laser, Mid-infrared, VCSEL",
author = "A. Simaz and G. Bohm and A. Koninger and Belkin, {M. A.}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 29th IEEE International Semiconductor Laser Conference, ISLC 2024 ; Conference date: 29-09-2024 Through 02-10-2024",
year = "2024",
doi = "10.1109/ISLC57752.2024.10717418",
language = "English",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE 29th International Semiconductor Laser Conference, ISLC 2024 - Proceedings",
}