Mid-infrared resonant-cavity GaSb light emitting diodes with a metal back plane

Andrea Simaz; Mina Beshara; Gerhard Böhm; Anna Kröninger; Mikhail A. Belkin

doi:10.1117/12.2648251

Mid-infrared resonant-cavity GaSb light emitting diodes with a metal back plane

Andrea Simaz, Mina Beshara, Gerhard Böhm, Anna Kröninger, Mikhail A. Belkin

Walter Schottky Institut

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We fabricated a short resonant-cavity light emitting diodes (SRC-LEDs) with emission wavelength at 3.4 µm using a metal ground plane positioned quarter-wavelength from the active region and the total semiconductor optical cavity thickness of five quarter-wavelengths. Devices were fabricated using wafer bonding and substrate removal process. Experimental testing in continuous wave operation at room temperature demonstrates six times enhancement of the optical power output of short resonant-cavity LEDs compared to a reference conventional “bulk” LEDs with an identical active region and optical radiation extraction through a thinned-down doped substrate.

Original language	English
Title of host publication	Light-Emitting Devices, Materials, and Applications XXVII
Editors	Jong Kyu Kim, Michael R. Krames, Martin Strassburg
Publisher	SPIE
ISBN (Electronic)	9781510659872
DOIs	https://doi.org/10.1117/12.2648251
State	Published - 2023
Event	Light-Emitting Devices, Materials, and Applications XXVII 2023 - San Francisco, United States Duration: 30 Jan 2023 → 1 Feb 2023

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	12441
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Light-Emitting Devices, Materials, and Applications XXVII 2023
Country/Territory	United States
City	San Francisco
Period	30/01/23 → 1/02/23

Keywords

GaSb LEDs
MWIR LEDs
Purcell Enhancement
Resonant Cavity LEDs
Type II active region

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10.1117/12.2648251

Cite this

Simaz, A., Beshara, M., Böhm, G., Kröninger, A., & Belkin, M. A. (2023). Mid-infrared resonant-cavity GaSb light emitting diodes with a metal back plane. In J. K. Kim, M. R. Krames, & M. Strassburg (Eds.), Light-Emitting Devices, Materials, and Applications XXVII Article 124410H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12441). SPIE. https://doi.org/10.1117/12.2648251

@inproceedings{8994ea0444304d449cebb6d0c11cae91,

title = "Mid-infrared resonant-cavity GaSb light emitting diodes with a metal back plane",

abstract = "We fabricated a short resonant-cavity light emitting diodes (SRC-LEDs) with emission wavelength at 3.4 µm using a metal ground plane positioned quarter-wavelength from the active region and the total semiconductor optical cavity thickness of five quarter-wavelengths. Devices were fabricated using wafer bonding and substrate removal process. Experimental testing in continuous wave operation at room temperature demonstrates six times enhancement of the optical power output of short resonant-cavity LEDs compared to a reference conventional “bulk” LEDs with an identical active region and optical radiation extraction through a thinned-down doped substrate.",

keywords = "GaSb LEDs, MWIR LEDs, Purcell Enhancement, Resonant Cavity LEDs, Type II active region",

author = "Andrea Simaz and Mina Beshara and Gerhard B{\"o}hm and Anna Kr{\"o}ninger and Belkin, {Mikhail A.}",

year = "2023",

doi = "10.1117/12.2648251",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Kim, {Jong Kyu} and Krames, {Michael R.} and Martin Strassburg",

booktitle = "Light-Emitting Devices, Materials, and Applications XXVII",

}

Simaz, A, Beshara, M, Böhm, G, Kröninger, A & Belkin, MA 2023, Mid-infrared resonant-cavity GaSb light emitting diodes with a metal back plane. in JK Kim, MR Krames & M Strassburg (eds), Light-Emitting Devices, Materials, and Applications XXVII., 124410H, Proceedings of SPIE - The International Society for Optical Engineering, vol. 12441, SPIE, Light-Emitting Devices, Materials, and Applications XXVII 2023, San Francisco, United States, 30/01/23. https://doi.org/10.1117/12.2648251

Mid-infrared resonant-cavity GaSb light emitting diodes with a metal back plane. / Simaz, Andrea; Beshara, Mina; Böhm, Gerhard et al.
Light-Emitting Devices, Materials, and Applications XXVII. ed. / Jong Kyu Kim; Michael R. Krames; Martin Strassburg. SPIE, 2023. 124410H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12441).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Mid-infrared resonant-cavity GaSb light emitting diodes with a metal back plane

AU - Simaz, Andrea

AU - Beshara, Mina

AU - Böhm, Gerhard

AU - Kröninger, Anna

AU - Belkin, Mikhail A.

PY - 2023

Y1 - 2023

N2 - We fabricated a short resonant-cavity light emitting diodes (SRC-LEDs) with emission wavelength at 3.4 µm using a metal ground plane positioned quarter-wavelength from the active region and the total semiconductor optical cavity thickness of five quarter-wavelengths. Devices were fabricated using wafer bonding and substrate removal process. Experimental testing in continuous wave operation at room temperature demonstrates six times enhancement of the optical power output of short resonant-cavity LEDs compared to a reference conventional “bulk” LEDs with an identical active region and optical radiation extraction through a thinned-down doped substrate.

AB - We fabricated a short resonant-cavity light emitting diodes (SRC-LEDs) with emission wavelength at 3.4 µm using a metal ground plane positioned quarter-wavelength from the active region and the total semiconductor optical cavity thickness of five quarter-wavelengths. Devices were fabricated using wafer bonding and substrate removal process. Experimental testing in continuous wave operation at room temperature demonstrates six times enhancement of the optical power output of short resonant-cavity LEDs compared to a reference conventional “bulk” LEDs with an identical active region and optical radiation extraction through a thinned-down doped substrate.

KW - GaSb LEDs

KW - MWIR LEDs

KW - Purcell Enhancement

KW - Resonant Cavity LEDs

KW - Type II active region

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DO - 10.1117/12.2648251

M3 - Conference contribution

AN - SCOPUS:85184660862

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Light-Emitting Devices, Materials, and Applications XXVII

A2 - Kim, Jong Kyu

A2 - Krames, Michael R.

A2 - Strassburg, Martin

PB - SPIE

T2 - Light-Emitting Devices, Materials, and Applications XXVII 2023

Y2 - 30 January 2023 through 1 February 2023

ER -

Mid-infrared resonant-cavity GaSb light emitting diodes with a metal back plane

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