Abstract
We discuss the design of mid-infrared quantum cascade lasers in which the emission frequency can be rapidly modulated by applied bias voltage. The devices are based on integrating a layer with voltage-variable refractive index, based on Stark-tunable inter-sub-band transitions, below the laser active region. A three-terminal configuration is used to independently bias the laser active region and the refractive index variation layer. The ultimate performance of the proposed scheme is analyzed theoretically and proof-of-principle devices are demonstrated experimentally. Experimentally, λ 10μ m lasers demonstrate up to 4.5-GHz frequency tuning at a temperature of 80 K.
| Original language | English |
|---|---|
| Article number | 6355597 |
| Pages (from-to) | 60-64 |
| Number of pages | 5 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 49 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2013 |
| Externally published | Yes |
Keywords
- Frequency modulation
- III-V semiconductor lasers
- mid-and far-infrared lasers
- quantum cascade lasers
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