Abstract
We discuss the design of mid-infrared quantum cascade lasers in which the emission frequency can be rapidly modulated by applied bias voltage. The devices are based on integrating a layer with voltage-variable refractive index, based on Stark-tunable inter-sub-band transitions, below the laser active region. A three-terminal configuration is used to independently bias the laser active region and the refractive index variation layer. The ultimate performance of the proposed scheme is analyzed theoretically and proof-of-principle devices are demonstrated experimentally. Experimentally, λ 10μ m lasers demonstrate up to 4.5-GHz frequency tuning at a temperature of 80 K.
Original language | English |
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Article number | 6355597 |
Pages (from-to) | 60-64 |
Number of pages | 5 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 49 |
Issue number | 1 |
DOIs | |
State | Published - 2013 |
Externally published | Yes |
Keywords
- Frequency modulation
- III-V semiconductor lasers
- mid-and far-infrared lasers
- quantum cascade lasers