Microstructure and magnetoresistance of epitaxial films of the layered perovskite La2-2xSr1+2xMn2O7 (x=0.3 and 0.4)

J. B. Philipp, J. Klein, C. Recher, T. Walther, W. Mader, M. Schmid, R. Suryanarayanan, L. Alff, R. Gross

Research output: Contribution to journalArticlepeer-review

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Abstract

We have grown c-axis oriented epitaxial thin films of the bilayered perovskite La2-2xSr1-2xMn2O7 (x=0.3,0.4) by laser molecular beam epitaxy on NdGaO3 and SrTiO3 substrates. X-ray diffraction and high- resolution transmission electron microscopy (TEM) revealed excellent epitaxial quality and phase purity of the films. However, a high density of stacking faults could also be detected by TEM. A comparison of magnetotransport measurements within the ab plane and along the c-axis direction showed an intrinsic c-axis tunneling magnetoresistance effect associated with nonlinear current-voltage characteristics for the x=0.3 compound. In addition to the colossal magnetoresistance effect around the Curie temperature Tc, at temperatures below about 40 K an additional high-field magnetoresistance was found probably due to a strain and disorder induced re-entrant spin glass state in both the x=0.3 and 0.4 compound. Our experiments show that the coherency strain in the high-quality epitaxial films results in pronounced differences in the magnetotransport behavior as compared to single crystals.

Original languageEnglish
Article number184411
Pages (from-to)1844111-18441111
Number of pages16597001
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number18
StatePublished - 1 May 2002
Externally publishedYes

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