Microstructural characterisation of nanocrystalline GaN prepared by detonations of gallium azides

Alissa C. Frank; Frank Stowasser; Oliver Stark; Hyon Tae Kwak; Harald Sussek; Andreas Rupp; Hans Pritzkow; Oliver Ambacher; Michael Giersig; Roland A. Fischer

doi:10.1002/(SICI)1099-0712(199805/06)8:3<135::AID-AMO342>3.0.CO;2-C

Microstructural characterisation of nanocrystalline GaN prepared by detonations of gallium azides

Alissa C. Frank, Frank Stowasser, Oliver Stark, Hyon Tae Kwak, Harald Sussek, Andreas Rupp, Hans Pritzkow, Oliver Ambacher, Michael Giersig, Roland A. Fischer

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

High quality nanoscale, phase-pure hexagonal gallium nitride (GaN) crystallites have been synthesized by the thermal induced detonation of molecular precursors of the type (R₃N)Ga(N₃)₃ (R = CH₃, C₂H₅, etc.)• The method allows the control of the particle size regime from 2 to about 1000 nm. X-ray diffraction and Rietveld simulations revealed an anisotropic platelet-like shape of the particles. The obtained GaN material was as well characterized by transmission electron microscopy and electron diffraction, photoluminescence spectroscopy, SEM, IR, RAMAN, thermal gas effusion/mass spectrometry, thermal analysis, elemental analysis. Gas absorption measurements (BET method) showed a specific surface area of about 90 m² · g^-1.

Original language	English
Pages (from-to)	135-146
Number of pages	12
Journal	Advanced Materials for Optics and Electronics
Volume	8
Issue number	3
DOIs	https://doi.org/10.1002/(SICI)1099-0712(199805/06)8:3<135::AID-AMO342>3.0.CO;2-C
State	Published - 1998
Externally published	Yes

Keywords

Detonation
Gallium azide
Gallium nitride
Nanocrystallites

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10.1002/(SICI)1099-0712(199805/06)8:3<135::AID-AMO342>3.0.CO;2-C

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Frank, A. C., Stowasser, F., Stark, O., Kwak, H. T., Sussek, H., Rupp, A., Pritzkow, H., Ambacher, O., Giersig, M., & Fischer, R. A. (1998). Microstructural characterisation of nanocrystalline GaN prepared by detonations of gallium azides. Advanced Materials for Optics and Electronics, 8(3), 135-146. https://doi.org/10.1002/(SICI)1099-0712(199805/06)8:3<135::AID-AMO342>3.0.CO;2-C

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title = "Microstructural characterisation of nanocrystalline GaN prepared by detonations of gallium azides",

abstract = "High quality nanoscale, phase-pure hexagonal gallium nitride (GaN) crystallites have been synthesized by the thermal induced detonation of molecular precursors of the type (R3N)Ga(N3)3 (R = CH3, C2H5, etc.)• The method allows the control of the particle size regime from 2 to about 1000 nm. X-ray diffraction and Rietveld simulations revealed an anisotropic platelet-like shape of the particles. The obtained GaN material was as well characterized by transmission electron microscopy and electron diffraction, photoluminescence spectroscopy, SEM, IR, RAMAN, thermal gas effusion/mass spectrometry, thermal analysis, elemental analysis. Gas absorption measurements (BET method) showed a specific surface area of about 90 m2 · g-1.",

keywords = "Detonation, Gallium azide, Gallium nitride, Nanocrystallites",

author = "Frank, {Alissa C.} and Frank Stowasser and Oliver Stark and Kwak, {Hyon Tae} and Harald Sussek and Andreas Rupp and Hans Pritzkow and Oliver Ambacher and Michael Giersig and Fischer, {Roland A.}",

year = "1998",

doi = "10.1002/(SICI)1099-0712(199805/06)8:3<135::AID-AMO342>3.0.CO;2-C",

language = "English",

volume = "8",

pages = "135--146",

journal = "Advanced Materials for Optics and Electronics",

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}

Frank, AC, Stowasser, F, Stark, O, Kwak, HT, Sussek, H, Rupp, A, Pritzkow, H, Ambacher, O, Giersig, M & Fischer, RA 1998, 'Microstructural characterisation of nanocrystalline GaN prepared by detonations of gallium azides', Advanced Materials for Optics and Electronics, vol. 8, no. 3, pp. 135-146. https://doi.org/10.1002/(SICI)1099-0712(199805/06)8:3<135::AID-AMO342>3.0.CO;2-C

TY - JOUR

T1 - Microstructural characterisation of nanocrystalline GaN prepared by detonations of gallium azides

AU - Frank, Alissa C.

AU - Stowasser, Frank

AU - Stark, Oliver

AU - Kwak, Hyon Tae

AU - Sussek, Harald

AU - Rupp, Andreas

AU - Pritzkow, Hans

AU - Ambacher, Oliver

AU - Giersig, Michael

AU - Fischer, Roland A.

PY - 1998

Y1 - 1998

N2 - High quality nanoscale, phase-pure hexagonal gallium nitride (GaN) crystallites have been synthesized by the thermal induced detonation of molecular precursors of the type (R3N)Ga(N3)3 (R = CH3, C2H5, etc.)• The method allows the control of the particle size regime from 2 to about 1000 nm. X-ray diffraction and Rietveld simulations revealed an anisotropic platelet-like shape of the particles. The obtained GaN material was as well characterized by transmission electron microscopy and electron diffraction, photoluminescence spectroscopy, SEM, IR, RAMAN, thermal gas effusion/mass spectrometry, thermal analysis, elemental analysis. Gas absorption measurements (BET method) showed a specific surface area of about 90 m2 · g-1.

AB - High quality nanoscale, phase-pure hexagonal gallium nitride (GaN) crystallites have been synthesized by the thermal induced detonation of molecular precursors of the type (R3N)Ga(N3)3 (R = CH3, C2H5, etc.)• The method allows the control of the particle size regime from 2 to about 1000 nm. X-ray diffraction and Rietveld simulations revealed an anisotropic platelet-like shape of the particles. The obtained GaN material was as well characterized by transmission electron microscopy and electron diffraction, photoluminescence spectroscopy, SEM, IR, RAMAN, thermal gas effusion/mass spectrometry, thermal analysis, elemental analysis. Gas absorption measurements (BET method) showed a specific surface area of about 90 m2 · g-1.

KW - Detonation

KW - Gallium azide

KW - Gallium nitride

KW - Nanocrystallites

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U2 - 10.1002/(SICI)1099-0712(199805/06)8:3<135::AID-AMO342>3.0.CO;2-C

DO - 10.1002/(SICI)1099-0712(199805/06)8:3<135::AID-AMO342>3.0.CO;2-C

M3 - Article

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JO - Advanced Materials for Optics and Electronics

JF - Advanced Materials for Optics and Electronics

IS - 3

ER -

Microstructural characterisation of nanocrystalline GaN prepared by detonations of gallium azides

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