Abstract
Raman scattering is employed to investigate boron-hydrogen complexes in passivated crystalline silicon. Changes of the localized vibrational modes of boron and hydrogen with isotope substitution and under uniaxial pressure provide detailed microscopic information about the structure of B-H pairs. The results are used to address the validity of different models previously proposed in the literature.
| Original language | English |
|---|---|
| Pages (from-to) | 12668-12671 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 38 |
| Issue number | 17 |
| DOIs | |
| State | Published - 1988 |
| Externally published | Yes |