Abstract
The microscopic interface asymmetry of (001)-grown semiconductor heterostructures that gives rise to heavy-light hole coupling even at zero in-plane wave vector k∥, modifies also the subband dispersion of confined electrons. Starting from a multiband envelope formulation we apply matrix perturbation theory to derive explicit expressions caused by this interface asymmetry, which in the 2 × 2 conduction band Hamiltonian appear as a warping and a spin-splitting term. The warping term results in an inequivalence of the dispersion along [110] and [11̄0] as required by the microscopic C2v symmetry, while the spin-splitting term has the same structure as the corresponding term derived from the zinc-blende bulk inversion asymmetry. Implications with respect to spin-relaxation will be discussed.
Original language | English |
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Pages (from-to) | 313-316 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 121 |
Issue number | 6-7 |
DOIs | |
State | Published - 22 Feb 2002 |
Externally published | Yes |
Keywords
- A. Heterojunctions
- A. Quantum wells
- A. Semiconductors
- Bulk inversion asymmetry
- D. Electronic band structure
- D. Spin dynamics
- Electron subband
- Interface asymmetry
- Spin relaxation
- Spin-splitting
- Warping