Abstract
The microscopic origin and the creation mechanisms of metastable, light-induced defects in hydrogenated amorphous silicon are reviewed. Based on excitonic electron-hole pair recombination, a consistent quantitative description of defect creation kinetics can be obtained, including the experimentally observed differences between continuous wave and pulsed illumination as well as the effect of competing recombination pathways in compensated material. High resolution spin resonance spectra obtained by low-field spin-dependent transport are used to examine the interaction of metastable defects with hydrogen.
Original language | English |
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Pages (from-to) | 37-48 |
Number of pages | 12 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 467 |
DOIs | |
State | Published - 1997 |
Event | Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: 31 Mar 1997 → 4 Apr 1997 |