Microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cell applications

Stefan Klein; Johannes Wolff; Friedhelm Finger; Reinhard Carius; Heribert Wagner; Martin Stutzmann

doi:10.1143/jjap.41.l10

Microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cell applications

Stefan Klein, Johannes Wolff, Friedhelm Finger, Reinhard Carius, Heribert Wagner, Martin Stutzmann

TUM Emeriti of Excellence

Forschungszentrum Jülich (FZJ)

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The hot-wire deposition of μc-Si:H at low substrate and filament temperatures improves the material quality substantially. At a substrate temperature of 285°C and a filament temperature of 1530°C we prepared microcrystalline films with a spin density of Ns = 1 × 10¹⁶ cm^-3 measured by electron spin resonance (ESR) and an oxygen and carbon concentration of 2 × 10¹⁸ cm^-3 at a deposition rate of 2.5 Å·s^-1. From infrared spectroscopy we calculated a hydrogen content of 5% in the best films. The spectra did not show absorption from SiO modes, which is typical for nonporous material. By incorporating this material into microcrystalline solar cells, we achieved an initial efficiency of 7%. By reducing the substrate temperature, an even higher efficiency of 7.5% was obtained.

Original language	English
Pages (from-to)	L10-L12
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	1 A/B
DOIs	https://doi.org/10.1143/jjap.41.l10
State	Published - 15 Jan 2002

Keywords

Conductivity
Hot-wire CVD
Hydrogen content
Infrared absorption
Microcrystalline silicon
Solar cells
Spin density
Substrate temperature

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10.1143/jjap.41.l10

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title = "Microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cell applications",

abstract = "The hot-wire deposition of μc-Si:H at low substrate and filament temperatures improves the material quality substantially. At a substrate temperature of 285°C and a filament temperature of 1530°C we prepared microcrystalline films with a spin density of Ns = 1 × 1016 cm-3 measured by electron spin resonance (ESR) and an oxygen and carbon concentration of 2 × 1018 cm-3 at a deposition rate of 2.5 {\AA}·s-1. From infrared spectroscopy we calculated a hydrogen content of 5% in the best films. The spectra did not show absorption from SiO modes, which is typical for nonporous material. By incorporating this material into microcrystalline solar cells, we achieved an initial efficiency of 7%. By reducing the substrate temperature, an even higher efficiency of 7.5% was obtained.",

keywords = "Conductivity, Hot-wire CVD, Hydrogen content, Infrared absorption, Microcrystalline silicon, Solar cells, Spin density, Substrate temperature",

author = "Stefan Klein and Johannes Wolff and Friedhelm Finger and Reinhard Carius and Heribert Wagner and Martin Stutzmann",

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language = "English",

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pages = "L10--L12",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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Microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cell applications. / Klein, Stefan; Wolff, Johannes; Finger, Friedhelm et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 1 A/B, 15.01.2002, p. L10-L12.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cell applications

AU - Klein, Stefan

AU - Wolff, Johannes

AU - Finger, Friedhelm

AU - Carius, Reinhard

AU - Wagner, Heribert

AU - Stutzmann, Martin

PY - 2002/1/15

Y1 - 2002/1/15

N2 - The hot-wire deposition of μc-Si:H at low substrate and filament temperatures improves the material quality substantially. At a substrate temperature of 285°C and a filament temperature of 1530°C we prepared microcrystalline films with a spin density of Ns = 1 × 1016 cm-3 measured by electron spin resonance (ESR) and an oxygen and carbon concentration of 2 × 1018 cm-3 at a deposition rate of 2.5 Å·s-1. From infrared spectroscopy we calculated a hydrogen content of 5% in the best films. The spectra did not show absorption from SiO modes, which is typical for nonporous material. By incorporating this material into microcrystalline solar cells, we achieved an initial efficiency of 7%. By reducing the substrate temperature, an even higher efficiency of 7.5% was obtained.

AB - The hot-wire deposition of μc-Si:H at low substrate and filament temperatures improves the material quality substantially. At a substrate temperature of 285°C and a filament temperature of 1530°C we prepared microcrystalline films with a spin density of Ns = 1 × 1016 cm-3 measured by electron spin resonance (ESR) and an oxygen and carbon concentration of 2 × 1018 cm-3 at a deposition rate of 2.5 Å·s-1. From infrared spectroscopy we calculated a hydrogen content of 5% in the best films. The spectra did not show absorption from SiO modes, which is typical for nonporous material. By incorporating this material into microcrystalline solar cells, we achieved an initial efficiency of 7%. By reducing the substrate temperature, an even higher efficiency of 7.5% was obtained.

KW - Conductivity

KW - Hot-wire CVD

KW - Hydrogen content

KW - Infrared absorption

KW - Microcrystalline silicon

KW - Solar cells

KW - Spin density

KW - Substrate temperature

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U2 - 10.1143/jjap.41.l10

DO - 10.1143/jjap.41.l10

M3 - Article

AN - SCOPUS:0037082078

SN - 0021-4922

VL - 41

SP - L10-L12

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 1 A/B

ER -

Microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cell applications

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