Abstract
Reversible changes in the electronic spin-lattice relaxation time T1 are observed in the case of the dangling-bond defect in hydrogenated amorphous silicon. These changes occur during prolonged illumination with intense light and are completely reversible upon annealing at elevated temperatures in the dark. A possible connection with metastable quenching of localized vibrational modes is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 7379-7382 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 33 |
| Issue number | 10 |
| DOIs | |
| State | Published - 1986 |
| Externally published | Yes |