Metal impurities in a-Si:H and other amorphous semiconductors

Martin Stutzmann

doi:10.1016/0022-3093(89)90602-9

Metal impurities in a-Si:H and other amorphous semiconductors

Martin Stutzmann

Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The g = 1.933 (g = 1.925) spin-resonance signals observed in thin films of a-Si:H (a-Ge:H) are discussed. Mo⁵⁺-ions formed through the incorporation of MoO₂ or MoO₃ molecules in the semiconducting films are proposed as the microscopic origin of these resonances. Evidence for the electronic activity of these defect levels is presented.

Original language	English
Pages (from-to)	414-416
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	114
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(89)90602-9
State	Published - 2 Dec 1989
Externally published	Yes

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10.1016/0022-3093(89)90602-9

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title = "Metal impurities in a-Si:H and other amorphous semiconductors",

abstract = "The g = 1.933 (g = 1.925) spin-resonance signals observed in thin films of a-Si:H (a-Ge:H) are discussed. Mo5+-ions formed through the incorporation of MoO2 or MoO3 molecules in the semiconducting films are proposed as the microscopic origin of these resonances. Evidence for the electronic activity of these defect levels is presented.",

author = "Martin Stutzmann",

note = "Funding Information: * Work supported by the Bundesminister ffir Forschung und Technologie under contract No. 0328962A.",

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AU - Stutzmann, Martin

N1 - Funding Information: * Work supported by the Bundesminister ffir Forschung und Technologie under contract No. 0328962A.

PY - 1989/12/2

Y1 - 1989/12/2

N2 - The g = 1.933 (g = 1.925) spin-resonance signals observed in thin films of a-Si:H (a-Ge:H) are discussed. Mo5+-ions formed through the incorporation of MoO2 or MoO3 molecules in the semiconducting films are proposed as the microscopic origin of these resonances. Evidence for the electronic activity of these defect levels is presented.

AB - The g = 1.933 (g = 1.925) spin-resonance signals observed in thin films of a-Si:H (a-Ge:H) are discussed. Mo5+-ions formed through the incorporation of MoO2 or MoO3 molecules in the semiconducting films are proposed as the microscopic origin of these resonances. Evidence for the electronic activity of these defect levels is presented.

UR - https://www.scopus.com/pages/publications/0024822805

U2 - 10.1016/0022-3093(89)90602-9

DO - 10.1016/0022-3093(89)90602-9

M3 - Article

AN - SCOPUS:0024822805

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EP - 416

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Metal impurities in a-Si:H and other amorphous semiconductors

Abstract

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