Medium-wavelength, normal-incidence, p-type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K

P. Kruck, M. Helm, T. Fromherz, G. Bauer, J. F. Nützel, G. Abstreiter

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Abstract

The detector characteristics of a pseudomorphic p-type Si0.64Ge0.36/Si quantum well infrared photodetector are reported. The device exhibits a photoresponse between 3 and 8 μm with a peak responsivity of Rp = 76 mA/W, at a peak wavelength of λp = 5 μm, resulting in a detectivity as high as Dλ* = 2 × 1010 cm√Hz/W at a temperature of T = 77 K. Background limited infrared performance is achieved up to T = 85 K. Investigation of the polarization dependence shows that in-plane polarized radiation produces the largest photoresponse, thus making normal-incidence detection feasible. The relevant optical transitions are analyzed on the basis of a self-consistent 6-band Luttinger-Kohn calculation including the in-plane dispersion.

Original languageEnglish
Pages (from-to)3372-3374
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number22
DOIs
StatePublished - 25 Nov 1996

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