Abstract
The detector characteristics of a pseudomorphic p-type Si0.64Ge0.36/Si quantum well infrared photodetector are reported. The device exhibits a photoresponse between 3 and 8 μm with a peak responsivity of Rp = 76 mA/W, at a peak wavelength of λp = 5 μm, resulting in a detectivity as high as Dλ* = 2 × 1010 cm√Hz/W at a temperature of T = 77 K. Background limited infrared performance is achieved up to T = 85 K. Investigation of the polarization dependence shows that in-plane polarized radiation produces the largest photoresponse, thus making normal-incidence detection feasible. The relevant optical transitions are analyzed on the basis of a self-consistent 6-band Luttinger-Kohn calculation including the in-plane dispersion.
Original language | English |
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Pages (from-to) | 3372-3374 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 22 |
DOIs | |
State | Published - 25 Nov 1996 |