Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

C. Obermüller; A. Deisenrieder; G. Abstreiter; K. Karrai; S. Grosse; S. Manus; J. Feldmann; H. Lipsanen; M. Sopanen; J. Ahopelto

doi:10.1063/1.124374

Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

C. Obermüller
, A. Deisenrieder
, G. Abstreiter
, K. Karrai
, S. Grosse
, S. Manus
, J. Feldmann
, H. Lipsanen
, M. Sopanen
, J. Ahopelto

TUM Emeriti of Excellence

Walter Schottky Institut
Ludwig-Maximilians-Universität München
Helsinki University of Technology
VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The mechanical nanomanipulation of strain-induced Ga_0.9In_0.1As quantum dots was performed in a top-loading low-temperature near-field scanning optical microscope. The InP islands were formed by coherent Stransky-Krastanov growth mode on top of the 5 nm GaAs barrier film. The InP islands can be mechanically-modified using a tip that was scanned in contact with the sample under a controlled shear and friction force. The tip served a dual purpose - it manipulates the dots as well as provides for local illumination to analyze photoluminescence.

Original language	English
Pages (from-to)	358-360
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	3
DOIs	https://doi.org/10.1063/1.124374
State	Published - 19 Jul 1999

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10.1063/1.124374

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title = "Mechanical nanomanipulation of single strain-induced semiconductor quantum dots",

abstract = "The mechanical nanomanipulation of strain-induced Ga0.9In0.1As quantum dots was performed in a top-loading low-temperature near-field scanning optical microscope. The InP islands were formed by coherent Stransky-Krastanov growth mode on top of the 5 nm GaAs barrier film. The InP islands can be mechanically-modified using a tip that was scanned in contact with the sample under a controlled shear and friction force. The tip served a dual purpose - it manipulates the dots as well as provides for local illumination to analyze photoluminescence.",

author = "C. Oberm{\"u}ller and A. Deisenrieder and G. Abstreiter and K. Karrai and S. Grosse and S. Manus and J. Feldmann and H. Lipsanen and M. Sopanen and J. Ahopelto",

year = "1999",

month = jul,

day = "19",

doi = "10.1063/1.124374",

language = "English",

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journal = "Applied Physics Letters",

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T1 - Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

AU - Obermüller, C.

AU - Deisenrieder, A.

AU - Abstreiter, G.

AU - Karrai, K.

AU - Grosse, S.

AU - Manus, S.

AU - Feldmann, J.

AU - Lipsanen, H.

AU - Sopanen, M.

AU - Ahopelto, J.

PY - 1999/7/19

Y1 - 1999/7/19

N2 - The mechanical nanomanipulation of strain-induced Ga0.9In0.1As quantum dots was performed in a top-loading low-temperature near-field scanning optical microscope. The InP islands were formed by coherent Stransky-Krastanov growth mode on top of the 5 nm GaAs barrier film. The InP islands can be mechanically-modified using a tip that was scanned in contact with the sample under a controlled shear and friction force. The tip served a dual purpose - it manipulates the dots as well as provides for local illumination to analyze photoluminescence.

AB - The mechanical nanomanipulation of strain-induced Ga0.9In0.1As quantum dots was performed in a top-loading low-temperature near-field scanning optical microscope. The InP islands were formed by coherent Stransky-Krastanov growth mode on top of the 5 nm GaAs barrier film. The InP islands can be mechanically-modified using a tip that was scanned in contact with the sample under a controlled shear and friction force. The tip served a dual purpose - it manipulates the dots as well as provides for local illumination to analyze photoluminescence.

UR - https://www.scopus.com/pages/publications/0344614549

U2 - 10.1063/1.124374

DO - 10.1063/1.124374

M3 - Article

AN - SCOPUS:0344614549

SN - 0003-6951

VL - 75

SP - 358

EP - 360

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

Abstract

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