MBE growth of ternary SnGeSiGe superlattices

W. Dondl; E. Silveira; G. Abstreiter

doi:10.1016/0022-0248(95)00331-2

MBE growth of ternary SnGeSiGe superlattices

W. Dondl, E. Silveira, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Short period α-Sn/Ge/Si/Ge superlattices have been prepared on (001) Ge substrates by a low temperature molecular beam epitaxy (MBE) technique that allows large substrate temperature variations. LEED patterns show a good crystalline quality. Folded acoustic phonons of the superlattice structure are clearly visible in Raman spectroscopy. Their energetic positions are in good agreement with theoretical expectations.

Original language	English
Pages (from-to)	400-404
Number of pages	5
Journal	Journal of Crystal Growth
Volume	157
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00331-2
State	Published - 2 Dec 1995

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10.1016/0022-0248(95)00331-2

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@article{2afd05472e934219978f9ecaf5ff6d32,

title = "MBE growth of ternary SnGeSiGe superlattices",

abstract = "Short period α-Sn/Ge/Si/Ge superlattices have been prepared on (001) Ge substrates by a low temperature molecular beam epitaxy (MBE) technique that allows large substrate temperature variations. LEED patterns show a good crystalline quality. Folded acoustic phonons of the superlattice structure are clearly visible in Raman spectroscopy. Their energetic positions are in good agreement with theoretical expectations.",

author = "W. Dondl and E. Silveira and G. Abstreiter",

year = "1995",

month = dec,

day = "2",

doi = "10.1016/0022-0248(95)00331-2",

language = "English",

volume = "157",

pages = "400--404",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - MBE growth of ternary SnGeSiGe superlattices

AU - Dondl, W.

AU - Silveira, E.

AU - Abstreiter, G.

PY - 1995/12/2

Y1 - 1995/12/2

N2 - Short period α-Sn/Ge/Si/Ge superlattices have been prepared on (001) Ge substrates by a low temperature molecular beam epitaxy (MBE) technique that allows large substrate temperature variations. LEED patterns show a good crystalline quality. Folded acoustic phonons of the superlattice structure are clearly visible in Raman spectroscopy. Their energetic positions are in good agreement with theoretical expectations.

AB - Short period α-Sn/Ge/Si/Ge superlattices have been prepared on (001) Ge substrates by a low temperature molecular beam epitaxy (MBE) technique that allows large substrate temperature variations. LEED patterns show a good crystalline quality. Folded acoustic phonons of the superlattice structure are clearly visible in Raman spectroscopy. Their energetic positions are in good agreement with theoretical expectations.

UR - http://www.scopus.com/inward/record.url?scp=0029633730&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(95)00331-2

DO - 10.1016/0022-0248(95)00331-2

M3 - Article

AN - SCOPUS:0029633730

SN - 0022-0248

VL - 157

SP - 400

EP - 404

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

MBE growth of ternary SnGeSiGe superlattices

Abstract

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