MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.52.7 μm

Kristijonas Vizbaras, Alexander Bachmann, Shamsul Arafin, Kai Saller, Stefan Sprengel, Gerhard Boehm, Ralf Meyer, Markus Christian Amann

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6 Scopus citations

Abstract

In this work, we present our approach towards the growth of active regions and cladding layers for GaSb based record low-threshold lasers emitting in the range of 2.52.7 μm. First, a study on Sb incorporation in the AlGaAsSb cladding layers and GaInAsSb QWs is presented as a function of growth temperature. A linear decrease in Sb incorporation was observed for both cases. Second, a choice of well-barrier material is presented. Here, the best results have been achieved with a GaSb/GaInAsSb combination, yielding a low-temperature (20 K) photoluminescence (PL) response with a very narrow full-width at half-maximum (FWHM) of 4.5 meV. The latter is followed by an investigation of active region degradation with increased annealing temperatures. The rapid degradation has been confirmed by PL and X-ray diffraction studies. Finally, device results are presented. Lasers show ultra-low CW threshold current densities (44 A/cm2 at L→∞), in the wavelength range of 2.52.7 μm.

Original languageEnglish
Pages (from-to)446-449
Number of pages4
JournalJournal of Crystal Growth
Volume323
Issue number1
DOIs
StatePublished - 15 May 2011

Keywords

  • Antimonides
  • Infrared devices
  • Laser diodes
  • Molecular beam epitaxy
  • Semiconducting quaternary alloys

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