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Materials with tunable low-k dielectric constant derived from functionalized octahedral silsesquioxanes and spherosilicates

  • Felix Eckstorff
  • , Yongzhong Zhu
  • , Robert Maurer
  • , Thomas E. Müller
  • , Sabine Scholz
  • , Johannes A. Lercher
  • Technical University of Munich
  • Consortium für Elektrochemische Industrie der Wacker Chemie AG
  • RWTH Aachen University

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Linked octahedral silsesquioxanes and spherosilicates offer a unique approach to tailor materials with low dielectric constants. The key lies in the design of the linking structures, which is determined by the nature of the hydrolyzable alkoxysilyl groups in the monomer. Thus, the molecular structure of the monomers influences structural, dielectric, and mechanical properties of the spin-coated polymer films via the number of alkoxysilyl groups introduced. Dielectric constants and hardness can be tuned in the range k = 2.4-3.0 and 0.20-0.85 GPa, respectively. With the use of a porogen, a dielectric constant as low as 1.9 is achieved.

Original languageEnglish
Pages (from-to)2492-2498
Number of pages7
JournalPolymer
Volume52
Issue number12
DOIs
StatePublished - 26 May 2011

Keywords

  • Hardness
  • Low-k dielectric constant
  • Polyhedral oligomeric silsesquioxanes (POSS)

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