Materials and structural design of a mid-infrared light emitting device

Fritz Weik; Jens W. Tomm; Regine Glatthaar; Uwe Vetter; Dirk Szewczyk; Joachim Nurnus; Armin Lambrecht; Markus Grau; Meyer Ralf; Markus C. Amann; Bernd Spellenberg; Michael Bassler

doi:10.1117/12.528899

Materials and structural design of a mid-infrared light emitting device

Fritz Weik, Jens W. Tomm, Regine Glatthaar, Uwe Vetter, Dirk Szewczyk, Joachim Nurnus, Armin Lambrecht, Markus Grau, Meyer Ralf, Markus C. Amann, Bernd Spellenberg, Michael Bassler

Chair of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

An optically pumped emitter for the mid-infrared region around 4 μm based on narrow gap semiconductors is demonstrated. The pumping takes place in the near-infrared around 1 μm and the radiation is converted by the narrow gap semiconductor into the MIR region as spontaneous emission. IV-VI lead chalcogenide-based compounds, especially PbSe and III-V InAsSb-based quantum well systems are applied for frequency conversion. These materials are grown by MBE and characterized mainly by photo luminescence spectroscopy. For a high radiation efficiency the outcoupling of the light is enhanced by surface structuring. Useful structures generating high photoluminescence intensity are characterized by IR imaging with an IR camera system being sensitive in the spectral region of interest.

Original language	English
Pages (from-to)	149-157
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5366
DOIs	https://doi.org/10.1117/12.528899
State	Published - 2004
Event	Light-Emitting Diodes: Research, Manufacturing, and Applications VIII - San Jose, CA, United States Duration: 27 Jan 2004 → 28 Jan 2004

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title = "Materials and structural design of a mid-infrared light emitting device",

abstract = "An optically pumped emitter for the mid-infrared region around 4 μm based on narrow gap semiconductors is demonstrated. The pumping takes place in the near-infrared around 1 μm and the radiation is converted by the narrow gap semiconductor into the MIR region as spontaneous emission. IV-VI lead chalcogenide-based compounds, especially PbSe and III-V InAsSb-based quantum well systems are applied for frequency conversion. These materials are grown by MBE and characterized mainly by photo luminescence spectroscopy. For a high radiation efficiency the outcoupling of the light is enhanced by surface structuring. Useful structures generating high photoluminescence intensity are characterized by IR imaging with an IR camera system being sensitive in the spectral region of interest.",

author = "Fritz Weik and Tomm, {Jens W.} and Regine Glatthaar and Uwe Vetter and Dirk Szewczyk and Joachim Nurnus and Armin Lambrecht and Markus Grau and Meyer Ralf and Amann, {Markus C.} and Bernd Spellenberg and Michael Bassler",

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doi = "10.1117/12.528899",

language = "English",

volume = "5366",

pages = "149--157",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Light-Emitting Diodes: Research, Manufacturing, and Applications VIII ; Conference date: 27-01-2004 Through 28-01-2004",

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TY - JOUR

T1 - Materials and structural design of a mid-infrared light emitting device

AU - Weik, Fritz

AU - Tomm, Jens W.

AU - Glatthaar, Regine

AU - Vetter, Uwe

AU - Szewczyk, Dirk

AU - Nurnus, Joachim

AU - Lambrecht, Armin

AU - Grau, Markus

AU - Ralf, Meyer

AU - Amann, Markus C.

AU - Spellenberg, Bernd

AU - Bassler, Michael

PY - 2004

Y1 - 2004

N2 - An optically pumped emitter for the mid-infrared region around 4 μm based on narrow gap semiconductors is demonstrated. The pumping takes place in the near-infrared around 1 μm and the radiation is converted by the narrow gap semiconductor into the MIR region as spontaneous emission. IV-VI lead chalcogenide-based compounds, especially PbSe and III-V InAsSb-based quantum well systems are applied for frequency conversion. These materials are grown by MBE and characterized mainly by photo luminescence spectroscopy. For a high radiation efficiency the outcoupling of the light is enhanced by surface structuring. Useful structures generating high photoluminescence intensity are characterized by IR imaging with an IR camera system being sensitive in the spectral region of interest.

AB - An optically pumped emitter for the mid-infrared region around 4 μm based on narrow gap semiconductors is demonstrated. The pumping takes place in the near-infrared around 1 μm and the radiation is converted by the narrow gap semiconductor into the MIR region as spontaneous emission. IV-VI lead chalcogenide-based compounds, especially PbSe and III-V InAsSb-based quantum well systems are applied for frequency conversion. These materials are grown by MBE and characterized mainly by photo luminescence spectroscopy. For a high radiation efficiency the outcoupling of the light is enhanced by surface structuring. Useful structures generating high photoluminescence intensity are characterized by IR imaging with an IR camera system being sensitive in the spectral region of interest.

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U2 - 10.1117/12.528899

DO - 10.1117/12.528899

M3 - Conference article

AN - SCOPUS:3543145391

SN - 0277-786X

VL - 5366

SP - 149

EP - 157

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Light-Emitting Diodes: Research, Manufacturing, and Applications VIII

Y2 - 27 January 2004 through 28 January 2004

ER -

Materials and structural design of a mid-infrared light emitting device

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