Mapping the magnetic anisotropy in (Ga,Mn)As nanostructures

F. Hoffmann; G. Woltersdorf; W. Wegscheider; A. Einwanger; D. Weiss; C. H. Back

doi:10.1103/PhysRevB.80.054417

Mapping the magnetic anisotropy in (Ga,Mn)As nanostructures

F. Hoffmann, G. Woltersdorf, W. Wegscheider, A. Einwanger, D. Weiss, C. H. Back

University of Regensburg

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Anisotropic strain relaxation in (Ga,Mn)As nanostructures was studied combining time-resolved Kerr microscopy and ferromagnetic resonance techniques. Local resonance measurements on individual narrow stripes patterned along various crystallographic directions reveal that the easy axis of the magnetization can be forced perpendicular to the strain relaxation direction. Spatially resolved measurements on disk-shaped and rectangular (Ga,Mn)As structures allow us to directly visualize these local changes in the magnetic anisotropy. We show that the strain-induced edge anisotropy allows for an effective control of the coercive field in stripe structures.

Original language	English
Article number	054417
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	80
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevB.80.054417
State	Published - 28 Aug 2009
Externally published	Yes

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10.1103/PhysRevB.80.054417

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AU - Woltersdorf, G.

AU - Wegscheider, W.

AU - Einwanger, A.

AU - Weiss, D.

AU - Back, C. H.

PY - 2009/8/28

Y1 - 2009/8/28

N2 - Anisotropic strain relaxation in (Ga,Mn)As nanostructures was studied combining time-resolved Kerr microscopy and ferromagnetic resonance techniques. Local resonance measurements on individual narrow stripes patterned along various crystallographic directions reveal that the easy axis of the magnetization can be forced perpendicular to the strain relaxation direction. Spatially resolved measurements on disk-shaped and rectangular (Ga,Mn)As structures allow us to directly visualize these local changes in the magnetic anisotropy. We show that the strain-induced edge anisotropy allows for an effective control of the coercive field in stripe structures.

AB - Anisotropic strain relaxation in (Ga,Mn)As nanostructures was studied combining time-resolved Kerr microscopy and ferromagnetic resonance techniques. Local resonance measurements on individual narrow stripes patterned along various crystallographic directions reveal that the easy axis of the magnetization can be forced perpendicular to the strain relaxation direction. Spatially resolved measurements on disk-shaped and rectangular (Ga,Mn)As structures allow us to directly visualize these local changes in the magnetic anisotropy. We show that the strain-induced edge anisotropy allows for an effective control of the coercive field in stripe structures.

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Mapping the magnetic anisotropy in (Ga,Mn)As nanostructures

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